EPIGAP ELC-490-37

LED - Chip
ELС-490-37
Preliminary
10.04.2007
rev. 01/07
Radiation
Type
Technology
Electrodes
Green
Standard
InGaN/Al2O3
Both on top side
typ. dimensions in µm (±20 µm)
380 µm
Ø100
P
typ. thickness
90 (±20) µm
front side metalization
Au-alloy, 0.5 µm
350 µm
380 µm
Ø 90µm
100 µm
N
backside metalization
Al-alloy, 1.5 µm
350 µm
Maximum Ratings
Tamb = 25°C, unless otherwise specified
Test conditions
Parameter
Symbol
Value
Unit
IF
20
mA
IFM
100
mA
Operating temperature range
Tamb
-40 to +85
°C
Storage temperature range
Tstg
-40 to +100
°C
Typ
Max
Unit
3.3
3.5
V
Forward current (DC)
(tP ≤ 50 µs, tP /T = 1/2)
Peak forward current
Optical and Electrical Characteristics
Tamb = 25°C, unless otherwise specified
Test
Parameter
conditions
Symbol
Min
Forward voltage
IF = 20 mA
VF
Reverse voltage
IF = 1 µA
VR
5
Luminous intensity1
IF = 20 mA
Ιv
220
280
Dominant wavelength
IF = 20 mA
λD
480
490
Spectral bandwidth at 50%
IF = 20 mA
∆λ0.5
25
nm
Switching time
IF = 20 mA
tr , t f
20
ns
V
mcd
500
nm
1
Measured on bare chip on TO-18 header with EPIGAP equipment
Labeling
Type
Lot N°
Ιv(typ) [mcd]
VF(typ) [V]
Quantity
ELС-490-37
Packing: Chips on adhesive film with wire-bond side on top
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
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