7-Segment LED-Chip EDC-660-19-02 Preliminary 6/22/2007 rev. 05/07 Radiation Type Technology Electrodes Red Diffusion type GaAsP/GaAs P (anode) up typ. dimensions (µm) 690 275 24 typ. thickness 330 µm Application 785 cathode Au-alloy metalization anode Al metalization This miniature device is an excellent choice for applications where small size and reduced space are important factors such as complex displays in optical devices for laboratory, measurement, control- and medical equipment. Miscellaneous Parameters Tamb = 25°C, unless otherwise specified Parameter Test сonditions Symbol Value Unit Ta = -40..120°C TC(λC) 0.15 nm/K Operating temperature range Tamb -40 to +120 °C Storage temperature range Tstg -40 to +125 °C Typ Max Unit 1.75 2.0 V Temperature coefficient of λC Optical and Electrical Characteristics Tamb = 25°C, unless otherwise specified Test Parameter conditions1 Symbol Min Forward voltage IF = 5 mA VF Reverse voltage IR = 10 µA VR 5 Luminous intensity/segment2 IF = 5 mA Iv 55 IV ratio segment to segment2 IF = 5 mA 1.75 IV ratio to adjacent chip IF = 5 mA 2.00 Peak wavelength IF = 5 mA λp Spectral bandwidth at 50% IF = 5 mA ∆λ0.5 645 V 80 655 µcd 665 nm 17 nm 1 Current for one segment Measured on bare chip on TO-18 header 2 Labeling Type Lot N° Iv(typ) [µcd] VF(typ) [V] Quantity EDC-660-19-02 Packing: Chips in wafer pack or on adhesive film with wire-bond side on top *Note: All measurements carried out with EPIGAP equipment EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 1