LED - Chip ELС-685-21-15 Preliminary 10.04.2007 rev. 01/07 Radiation Type Technology Electrodes Deep red solderable AlGaAs/GaAs N (cathode) up typ. dimensions (µm) 1000 typ. thickness 260 (±20) µm 1000 cathode gold alloy, 1.5 µm anode gold alloy, 0.5 µm PoC-05 Optical and Electrical Characteristics Tamb = 25°C, unless otherwise specified Test Parameter conditions Symbol Min Typ Max Unit Forward voltage IF = 20 mA VF 1.7 2.0 V Forward voltage IF = 300 mA VF 2.0 2.4 V Reverse voltage IR = 100 µA VR 5 Radiant power IF = 20 mA Φe 0.75 1.0 mW Radiant power1 IF = 300 mA Φe 18 24 mW Peak wavelength IF = 300 mA λp 685 700 Spectral bandwidth at 50% IF = 300 mA ∆λ0.5 40 nm Switching time IF = 100 mA tr, tf 40/30 ns 1 V 710 nm Measured on bare chip on TO-18 header with EPIGAP equipment Labeling Lot N° Type Φe(typ) [mW] VF(typ) [V] Quantity ELС-685-21-15 Packing: Chips on adhesive film with wire-bond side on top EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 1