Excelics EFA060B/EFA060BV DATA SHEET Low Distortion GaAs Power FET 350 • • • • • • • 50 +25.0dBm TYPICAL OUTPUT POWER 10.5dB TYPICAL POWER GAIN FOR EFA060B AND 12.0dB FOR EFA060BV AT 12GHz 0.3 X 600 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY EFA060BV WITH VIA HOLE SOURCE GROUNDING Idss SORTED IN 10mA PER BIN RANGE D 350 100 95 P1dB G1dB PAE 50 Chip Thickness: 75 ± 20 microns All Dimensions In Microns PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression Vds=8V, Ids=50% Idss Gain at 1dB Compression Vds=8V, Ids=50% Idss Gain at 1dB Compression Vds=8V, Ids=50% Idss G 40 : Via Hole No Via Hole For EFA060B ELECTRICAL CHARACTERISTICS (Ta = 25 OC) SYMBOLS 48 EFA060B f=12GHz f=18GHz f=12GHz f=18GHz MIN TYP 23.0 25.0 25.0 10.5 8.0 9.0 f=12GHz UNIT EFA060BV MAX MIN TYP 23.0 25.0 25.0 12.0 10.0 10.5 35 MAX dBm dB % 36 Idss Saturated Drain Current Vds=3V, Vgs=0V 100 170 Gm Transconductance Vds=3V, Vgs=0V 70 90 Vp Pinch-off Voltage Vds=3V, Ids=1.5mA BVgd Drain Breakdown Voltage Igd=1.0mA -12 -15 -12 -15 V BVgs Source Breakdown Voltage Igs=1.0mA -7 -14 -7 -14 V Rth Thermal Resistance (Au-Sn Eutectic Attach) 240 -2.0 100 170 70 90 -3.5 -2.0 75 240 mA mS -3.5 V o C/W 55 MAXIMUM RATINGS AT 25OC SYMBOLS PARAMETERS EFA060BV EFA060B ABSOLUTE 1 CONTINUOUS 2 ABSOLUTE1 CONTINUOUS2 Vds Drain-Source Voltage 12V 8V 12V Vgs Gate-Source Voltage -8V -4V -8V -4V Ids Drain Current Idss 190mA Idss Idss Igsf Forward Gate Current 15mA 2.5mA 15mA 2.5mA Pin Input Power 23dBm @ 3dB Compression 23dBm @ 3dB Compression Tch Channel Temperature 175 oC 150oC 175oC 150oC Tstg Storage Temperature -65/175 oC -65/150oC -65/175oC -65/150oC Pt Total Power Dissipation 1.8W 1.5W 2.5W 2.1W Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054 Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com 8V EFA060B/EFA060BV DATA SHEET Low Distortion GaAs Power FET EFA060B P-1dB & PAE vs, Vds Pout & PAE vs. Pin f = 12 GHz Ids = 50% Idss 25 20 15 10 4 5 6 7 8 9 Pout (dBm) or Pae (%) 60 55 50 45 40 35 30 25 20 PAE (%) P-1dB(dBm) 30 f = 12 GHz Vds = 8V, Ids = 50% Idss 40 35 30 25 20 15 10 5 0 PA E Pout 0 10 5 10 EFA060B S-PARAMETERS 8V, 1/2 Idss FREQ (GHz) --- S11 --MAG --- S21 --- ANG MAG ANG 15 20 25 Pin (dBm) Drain-Source Voltage (V) EFA060BV S-PARAMETERS 8V, 1/2 Idss --- S12 --MAG ANG --- S22 --MAG ANG FREQ (GHz) --- S11 --MAG ANG --- S21 --MAG ANG --- S12 --MAG ANG --- S22 --MAG ANG -31.6 7.567 157.9 0.021 71.4 0.580 -14.0 -27.1 1.0 0.981 -31.1 6.867 158.9 0.020 73.0 0.540 -11.0 1.0 0.969 2.0 0.955 -58.2 6.229 140.5 0.037 60.1 0.500 -22.2 2.0 0.939 -60.4 6.840 139.5 0.038 57.0 0.548 3.0 0.920 -80.1 5.422 125.4 0.048 48.3 0.457 -30.0 3.0 0.900 -85.0 5.997 123.4 0.051 44.0 0.506 -37.2 4.0 0.889 -97.0 4.722 112.7 0.054 39.5 0.421 -36.6 4.0 0.879 -105.5 5.203 109.8 0.058 33.6 0.470 -45.4 5.0 0.869 -110.8 4.163 101.8 0.058 33.4 0.396 -42.8 5.0 0.866 -122.6 4.517 98.0 0.062 24.7 0.440 -52.1 6.0 0.855 -121.8 3.692 -49.0 6.0 0.859 -135.6 3.933 88.2 0.063 18.4 0.423 -57.8 -54.9 7.0 0.860 -145.8 3.475 79.9 0.064 12.8 0.412 -62.8 -61.5 8.0 0.860 -154.1 3.108 72.1 0.065 8.5 0.406 -68.0 -68.7 9.0 0.861 -160.9 2.812 65.1 0.065 4.3 0.403 -73.3 58.7 0.065 0.1 0.406 -78.6 -84.9 7.0 8.0 9.0 0.843 -130.5 3.322 0.837 -139.1 3.033 0.825 -146.9 2.769 92.3 0.060 28.1 0.373 83.9 0.061 24.4 0.361 75.6 0.062 19.3 0.352 67.7 0.062 15.3 0.344 10.0 0.818 -153.2 2.566 60.9 0.061 12.0 0.338 -76.0 10.0 0.861 -166.7 2.575 11.0 0.815 -160.1 2.419 53.4 0.062 -84.8 11.0 0.859 -172.2 2.380 52.1 0.065 -3.1 0.408 -94.3 12.0 0.858 -177.9 2.225 45.4 0.065 -6.5 0.414 -91.0 38.7 0.066 -10.1 0.417 -97.5 12.0 0.813 -168.3 2.278 45.5 0.062 9.2 0.336 5.6 0.335 13.0 0.819 -175.0 2.135 37.8 0.062 2.3 0.332 -104.7 13.0 0.853 176.4 2.083 14.0 0.817 178.5 2.018 30.1 0.063 0.2 0.335 -115.4 14.0 0.846 169.8 1.963 31.6 0.066 -13.8 0.426 -104.1 15.0 0.816 171.4 1.887 22.1 0.063 -3.2 0.340 -127.6 15.0 0.845 163.0 1.847 24.3 0.067 -18.1 0.435 -110.6 16.0 0.824 164.7 1.755 13.9 0.063 -6.5 0.353 -139.9 16.0 0.843 156.0 1.724 17.0 0.067 -21.2 0.447 -117.0 17.0 0.835 160.1 1.619 6.6 0.064 -8.5 0.369 -152.7 17.0 0.844 148.9 1.610 9.6 0.068 -26.2 0.458 -123.4 18.0 0.847 156.0 1.505 -0.6 0.064 -10.1 0.391 -164.3 18.0 0.849 141.9 1.497 2.5 0.066 -29.8 0.470 -129.3 -4.4 0.065 -33.0 0.483 -135.2 19.0 0.854 151.9 1.385 -8.1 0.064 -10.7 0.421 -175.1 19.0 0.856 135.8 1.384 20.0 0.856 150.2 1.256 -15.0 0.064 -12.0 0.455 175.1 20.0 0.865 131.1 1.278 -10.7 0.065 -35.6 0.498 -140.7 -20.4 0.064 -11.5 0.487 166.1 21.0 0.882 130.5 1.175 -15.9 0.063 -38.7 0.518 -149.1 -25.3 0.064 -10.4 0.522 158.2 22.0 0.888 128.4 1.091 -21.1 0.062 -39.2 0.542 -155.0 -29.6 0.064 -7.2 0.551 151.6 23.0 0.898 127.4 1.016 -25.8 0.060 -40.2 0.565 -160.1 -30.5 0.059 -39.8 0.589 -165.2 21.0 22.0 23.0 0.852 0.863 0.871 148.9 1.137 149.8 1.040 150.5 0.976 24.0 0.879 149.1 0.913 -35.4 0.066 -4.5 0.579 145.6 24.0 0.902 126.6 0.953 25.0 0.878 147.4 0.862 -40.4 0.069 -1.7 0.604 141.7 25.0 0.905 126.3 0.911 -34.6 0.058 -40.5 0.613 -169.8 26.0 0.876 147.5 0.803 -44.2 0.070 0.7 0.619 136.2 26.0 0.899 124.8 0.860 -39.1 0.058 -40.6 0.640 -172.6 Note: The data included 0.7 mils diameter Au bonding wires; 1 gate wires, 15 mils each; 1 drain wires, 20 mils each; 4 source wires, 7 mils each; no source wires for EFA060BV.