EPA480B/EPA480BV High Efficiency Heterojunction Power FET UPDATED: 09/27/2007 • • • • • • • +35.5dBm TYPICAL OUTPUT POWER 7.5dB TYPICAL POWER GAIN FOR EPA480B AND 9.0dB FOR EPA480BV AT 12GHz 0.3X 4800 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY EPA480BV WITH VIA HOLE SOURCE GROUNDING Idss SORTED IN 120mA PER BIN RANGE Chip Thickness: 45 ± 13 microns All Dimensions In Microns No Via Hole For EPA480B ELECTRICAL CHARACTERISTICS (Ta = 25 OC) SYMBOLS PAE Output Power at 1dB Compression Vds=8V, Ids=50% Idss Gain at 1dB Compression Vds=8V, Ids=50% Idss Gain at 1dB Compression Vds=8V, Ids=50% Idss Idss Saturated Drain Current Gm Transconductance Vp Pinch-off Voltage P1dB G1dB EPA480B PARAMETERS/TEST CONDITIONS f=12GHz f=18GHz f=12GHz Vds=3V, Vgs=0V MAX UNIT MIN TYP MIN TYP 34.0 35.5 34.0 dBm 6.0 7.5 7.5 35.5 35.5 9.0 45 % f=12GHz Vds=3V, Vgs=0V EPA480BV 40 880 1440 960 1520 Vds=3V, Ids=14mA -1.0 1880 880 1440 960 1520 -2.5 -1.0 MAX dB 1880 mA mS -2.5 V BVgd Drain Breakdown Voltage Igd=4.8mA -13 -15 -13 -15 V BVgs Source Breakdown Voltage Igs=4.8mA -7 -14 -7 -14 V Rth Thermal Resistance (Au-Sn Eutectic Attach) 10 o 8 C/W MAXIMUM RATINGS AT 25OC EPA480B EPA480BV SYMBOLS PARAMETERS Vds Drain-Source Voltage 12V 8V 12V 8V Vgs Gate-Source Voltage -8V -3V -8V -3V 1.75A ABSOLUTE1 CONTINUOUS2 ABSOLUTE1 Ids Drain Current Idss 1.4A Idss Igsf Forward Gate Current 240mA 40mA 240mA Pin Input Power 33dBm Tch Channel Temperature 175 C 150 C 175 C Storage Temperature o o o stg o -65/175 C @ 3dB Compression o -65/150 C Pt Total Power Dissipation 14W 11W Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. 33dBm o CONTINUOUS2 40mA @ 3dB Compression o 150 C o -65/175 C -65/150 C 17W 14W Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Page 1 of 2 September 2007 EPA480B/EPA480BV High Efficiency Heterojunction Power FET UPDATED: 09/27/2007 S-PARAMETERS EPA480B 8V, 1/2 Idss FREQ (GHz) 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 14.0 16.0 18.0 20.0 22.0 24.0 26.0 EPA480BV --- S11 --MAG ANG 0.867 -152.8 0.921 -168.1 0.950 -177.0 0.950 179.6 0.959 172.9 0.959 171.5 0.961 170.9 0.952 170.5 0.948 170.2 0.952 169.4 0.958 169.2 0.968 168.5 0.946 163.9 0.945 158.4 0.958 157.6 0.935 155.7 1.304 150.7 1.265 145.2 1.116 142.9 --- S21 --MAG ANG 7.224 106.4 3.791 87.7 2.900 78.1 2.175 71.6 1.718 65.2 1.440 59.7 1.235 54.5 1.074 49.4 0.942 44.3 0.812 41.8 0.743 35.5 0.667 31.8 0.539 24.5 0.450 15.7 0.391 9.0 0.352 1.8 0.319 -0.2 0.274 -12.4 0.238 -20.4 --- S12 --MAG ANG 0.014 11.8 0.015 16.8 0.015 26.6 0.017 30.4 0.015 43.3 0.017 49.3 0.020 47.9 0.023 48.5 0.023 48.5 0.024 57.4 0.028 52.8 0.004 -8.8 0.029 52.9 0.031 48.5 0.030 45.0 0.040 48.2 0.046 49.0 0.049 39.8 0.053 39.2 --- S21 --MAG ANG 8.989 96.7 4.575 84.1 3.030 75.8 2.237 68.8 1.718 63.1 1.390 57.8 1.163 53.3 0.992 49.3 0.863 45.6 0.760 42.0 0.682 38.8 0.613 35.3 0.511 27.6 0.438 18.0 0.367 7.9 0.299 -1.2 0.233 -6.9 0.192 -10.9 0.169 -11.6 --- S12 --MAG ANG 0.013 18.0 0.014 15.0 0.013 14.9 0.013 18.3 0.013 22.1 0.012 27.2 0.012 31.5 0.012 37.6 0.012 41.0 0.011 45.2 0.012 47.5 0.012 51.2 0.014 52.8 0.014 46.9 0.013 37.8 0.013 41.1 0.014 32.2 0.015 39.3 0.018 44.7 --- S22 --MAG ANG 0.644 -177.4 0.664 -176.3 0.680 -175.8 0.691 -176.0 0.703 -172.9 0.709 -174.7 0.721 -176.5 0.742 -179.7 0.760 178.1 0.769 -178.5 0.759 175.6 0.775 175.6 0.821 176.2 0.850 175.8 0.845 173.5 0.865 167.2 0.677 163.8 0.652 163.5 0.692 162.8 8V, 1/2 Idss FREQ (GHz) 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 14.0 16.0 18.0 20.0 22.0 24.0 26.0 --- S11 --MAG ANG 0.941 -156.9 0.948 -170.0 0.952 -176.1 0.951 -179.7 0.956 176.7 0.962 175.6 0.965 176.1 0.966 177.9 0.972 179.6 0.967 -179.0 0.969 -177.8 0.969 -177.3 0.965 178.4 0.970 169.2 0.972 158.8 0.979 152.1 0.969 163.2 0.978 158.9 0.977 158.9 --- S22 --MAG ANG 0.666 -174.6 0.675 -176.9 0.686 -176.2 0.699 -175.1 0.722 -172.7 0.736 -171.5 0.755 -171.0 0.772 -171.9 0.789 -172.3 0.805 -172.8 0.816 -173.1 0.818 -173.6 0.827 -172.3 0.854 -170.5 0.870 -170.6 0.877 -172.8 0.922 171.4 0.923 175.7 0.934 180.0 Note: The data included 0.7 mils diameter Au bonding wires; 4 gate wires, 15 mils each; 4 drain wires, 20 mils each; 10 source wires, 7 mils each; no source wires for EPA480BV. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Page 2 of 2 September 2007