EFA040A-100P Low Distortion GaAs Power FET UPDATED 11/17/2006 • • • • • • NON-HERMETIC 100MIL METAL FLANGE PACKAGE +23.0dBm TYPICAL OUTPUT POWER 9.0dB TYPICAL POWER GAIN AT 12GHz 0.3 X 400 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY D G ELECTRICAL CHARACTERISTICS (Ta = 25 OC) SYMBOLS PARAMETERS/TEST CONDITIONS MIN TYP 21.0 23.0 23.0 9.0 6.5 PAE Output Power at 1dB Compression f= 12GHz f= 18GHz VDS = 8V, IDS ≈ 50% IDSS Gain at 1dB Compression f= 12GHz f= 18GHz VDS = 8V, IDS ≈ 50% IDSS Power Added Efficiency at 1dB Compression f=12GHz VDS = 8V, IDS ≈ 50% IDSS IDSS Saturated Drain Current VDS = 3 V, VGS = 0 V 60 105 GM Transconductance VDS = 3 V, VGS = 0 V 45 60 VP Pinch-off Voltage VDS = 3 V, IDS = 1.0 mA P1dB G1dB 7.5 MAX UNIT dBm dB 35 -2.0 % 160 mA mS -3.5 V BVGD Drain Breakdown Voltage IGD = 1.0mA -13 -15 V BVGS Source Breakdown Voltage IGS = 1.0mA -7 -14 V 115* ºC/W RTH Thermal Resistance (Au-Sn Eutectic Attach) Note: * Overall Rth depends on case mounting. MAXIMUM RATINGS AT 25OC SYMBOLS VDS VGS Igf Igr Pin Tch Tstg Pt PARAMETERS Drain-Source Voltage Gate-Source Voltage Forward Gate Current Reverse Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE1 CONTINUOUS2 12V -5V 1.8 mA 0.3 mA 20 dBm 175oC -65/175oC 1.2 W 8V -4V 0.6 mA 0.1 mA @ 3dB Compression 175oC -65/175oC 1.2 W Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 page 1 of 2 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Revised November 2006 EFA040A-100P UPDATED 11/17/2006 Low Distortion GaAs Power FET DISCLAIMER EXCELICS SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. EXCELICS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN. LIFE SUPPORT POLICY EXCELICS SEMICONDUCTOR PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF EXCELICS SEMICONDUCTOR, INC. AS HERE IN: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 page 2 of 2 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Revised November 2006