EPA030D High Performance Heterojunction Dual-Gate FET UPDATED 11/30/2004 FEATURES • • • • • • • +18.0 dBm OUTPUT POWER AT 1dB COMPRESSION 19.5 dB POWER GAIN AT 12GHz 0.3 x 300 MICRON RECESSED “MUSHROOM” DUAL GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES EXTRA HIGH PERFORMANCE AND HIGH RELIABILITY MIXER, SWITCH, AGC AND TEMPERATURE COMPENSATION APPLICATIONS Idss SORTED IN 5mA PER BIN RANGE Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL Chip Thickness: 75 ± 13 microns All Dimensions In Microns PARAMETERS/TEST CONDITIONS1 MIN TYP MAX UNITS 15.0 18.0 dBm 17.5 19.5 dB 1.2 dB 17.5 dB P1dB Output Power at 1dB Compression VDS = 6V, IDS ≈ 50% IDSS, VG2S = 0V f = 12GHz G1dB Gain at 1dB Compression VDS = 6V, IDS ≈ 50% IDSS, VG2S = 0V f = 12GHz NF Noise Figure VDS = 3V, IDS ≈ 15mA, VG2S = 0V f = 12GHz Ga Associated Gain VDS = 3V, IDS ≈ 15mA, VG2S = 0V f = 12GHz IDSS Saturated Drain Current GM Transconductance VDS = 3V, VG1S = -0.5V, VG2S = 0 V VP1 Pinch-off Voltage VDS = 3V, IDS = 1.0mA, VG2S = 0 V -1.5 -3.5 V VP2 Pinch-off Voltage VDS = 3V, IDS = 1.0mA, VG1S = 0 V -1.5 -3.5 V BVG2D BVG1S RTH VDS = 3V, VG1S = VG2S = 0 V Gate 2 to Drain Breakdown Voltage IG2D = 1.0mA, Gate 1 Open Gate 1 to Source Breakdown Voltage IG1S = 1.0mA, Gate 2 Open Thermal Resistance 30 80 40 70 115 mA mS -10 -14 V -6 -12 V 125 o C/W Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 page 1 of 2 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Revised December 2004 EPA030D High Performance Heterojunction Dual-Gate FET UPDATED 11/30/2004 MAXIMUM RATINGS AT 25OC SYMBOL 1 PARAMETERS 2 ABSOLUTE CONTINUOURS VDS Drain to Source Voltage 10 V 7V VGS Gate to Source Voltage -6 V -3.5 V IDS Drain Current Idss Idss IGSF Forward Gate Current 15 mA 2.5 mA PIN Input Power 15 dBm @ 3dB compression PT Total Power Dissipation 1.1 W 900 mW TCH Channel Temperature 175°C 150°C TSTG Storage Temperature -65/+175°C -65/+150°C Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. S-PARAMETERS 6V, 1/2 Idss, Vg2s=0V FREQ --- S11 --- (GHz) MAG MAG ANG --- S12 --- --- S22 --- MAG ANG MAG ANG 1 0.991 -15.1 9.329 165.6 0.006 80.8 0.943 -5.5 2 3 FREQ --- S11 --- (GHz) MAG ANG --- S21 --MAG ANG --- S12 --- --- S22 --- MAG ANG MAG 21 0.758 144.0 4.807 -38.8 0.014 65.7 1.161 -107.6 0.965 -30.1 9.120 152.7 0.010 74.8 0.932 -11.2 22 0.786 138.7 4.797 -49.7 0.019 65.4 1.233 -114.5 0.937 -45.3 8.850 139.8 0.015 62.0 0.912 -16.4 23 0.809 134.2 4.809 -61.7 0.024 80.1 1.339 -122.8 4 0.897 -59.8 8.553 127.4 0.019 55.7 0.891 -21.6 24 0.838 130.0 4.793 -75.3 0.029 82.1 1.437 -133.4 5 0.854 -74.1 8.208 115.3 0.021 47.7 0.868 -26.5 25 0.875 126.4 4.749 -90.2 0.038 83.2 1.520 -144.3 6 0.818 -86.2 7.758 104.8 0.022 43.8 0.854 -30.7 26 0.907 123.2 4.604 -106.9 0.049 77.8 1.664 -158.3 7 0.786 -97.4 7.369 94.9 0.024 37.6 0.840 -34.5 27 0.932 119.3 4.423 -125.2 0.061 71.4 1.720 -173.9 8 0.753 -109.1 7.016 84.8 0.024 31.8 0.828 -38.7 28 0.960 114.9 4.008 -144.6 0.067 62.3 1.688 171.4 9 0.726 -119.9 6.697 75.2 0.024 26.7 0.817 -42.8 29 0.968 111.1 3.527 -163.4 0.071 53.8 1.638 158.6 10 0.699 -130.5 6.409 65.5 0.021 24.0 0.814 -47.2 30 0.952 107.2 3.016 179.0 0.072 45.5 1.555 147.2 11 0.688 -141.1 6.173 56.1 0.020 16.5 0.820 -52.1 31 0.947 103.2 2.587 162.1 0.072 39.9 1.433 137.9 12 0.687 -150.3 5.952 46.6 0.019 11.4 0.823 -58.0 32 0.944 99.6 2.198 145.5 0.074 35.2 1.317 129.4 13 0.684 -160.2 5.720 36.8 0.019 6.6 0.840 -64.0 33 0.951 95.6 1.920 129.5 0.077 32.7 1.227 123.7 14 0.687 -169.4 5.499 27.0 0.015 4.7 0.860 -70.1 34 0.942 92.4 1.619 114.1 0.073 24.8 1.123 117.7 15 0.688 -176.6 5.298 18.1 0.013 15.1 0.879 -76.8 35 0.959 87.8 1.412 98.9 0.075 19.7 1.033 113.6 16 0.715 176.6 5.189 8.0 0.012 13.4 0.923 -82.9 36 0.968 83.2 1.235 85.2 0.076 10.5 0.966 111.9 17 0.731 169.4 4.994 -2.0 0.012 14.7 0.960 -89.6 37 0.976 79.3 1.067 72.1 0.076 2.2 0.893 109.9 18 0.745 163.5 4.850 -11.6 0.012 20.0 0.995 -95.5 38 0.989 76.4 0.936 61.0 0.069 -6.3 0.851 109.1 19 0.774 156.6 4.705 -21.7 0.011 35.6 1.025 -101.1 39 0.985 72.6 0.829 49.0 0.066 -15.8 0.803 108.9 20 0.764 151.0 4.571 -31.0 0.012 42.3 1.093 -106.3 40 0.991 71.5 0.714 38.8 0.056 -21.3 0.785 108.4 Note: ANG --- S21 --- ANG The data included 0.7 mils diameter Au bonding wires: 1 gate wires, 15 mils each; 1 drain wires, 20 mils each; 4 source wires, 7 mils each., 2 gate2 wires(to ground), 7 mils each Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 page 2 of 2 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Revised December 2004