Gunter Semiconductor GmbH GFCF40 N Channel High voltage, Power MOSFET Chip Specification General Description: * Advanced Process Technology * Dynamic dV/dt Rating * 150℃ ℃ Operating Temperature * Fast Switching * Fully Avalanche Rated * High breakdown voltage Mechanical Data: D23 5.64mm x 5.64mm Dimension 480 µm Thickness: Metallization: Al Top : : CrNiAg / Au Backside : Suggested Bonding Conditions: Die Mounting: Solder Perform 95/5 PbSn or 92.5./2.5/5 PbAgIn Source Bonding Wire: 10 mil Al Absolute Maximum Rating Characteristics @Ta=25℃ ℃ Symbol Limit Unit Test Conditions Drain-to-Source Breakdown Voltage V(BR)DSS 900 V VGS=0V, ID=250µΑ Static Drain-to - Source On-resistance RDS(ON) 2.5 Ω VGS=10V, ID=2.8Α Continuous Drain current ( in target package) ID@25℃ 4.7 A VGS=10V Continuous Drain current ( in target package) ID@100℃ 2.9 A VGS=10V Tj -55~150 ℃ TSTR -55~150 ℃ PD 150 W Operation Junction Storage Temperature Target Device: IRFPF40 TO-247AC @Tc=25℃