GSG GFCG40

Gunter Semiconductor GmbH
GFCG40
N Channel High voltage, Power MOSFET
Chip Specification
General Description:
* Advanced Process Technology
* Dynamic dV/dt Rating
* 150℃
℃ Operating Temperature
* Fast Switching
* Fully Avalanche Rated
* High breakdown voltage
Mechanical Data:
D23
Dimension 5.64mm x 5.64mm
480 µm
Thickness:
Metallization:
Al
Top :
:
CrNiAg / Au
Backside :
Suggested Bonding Conditions:
Die Mounting: Solder Perform
95/5 PbSn or 92.5./2.5/5 PbAgIn
10 mil Al
Source Bonding Wire:
Absolute Maximum Rating
Characteristics
Drain-to-Source Breakdown Voltage
Static Drain-to - Source On-resistance
Continuous Drain current ( in target packag
Continuous Drain current ( in target packag
Operation Junction
Storage Temperature
Target Device: IRFG40
TO-247AC
@Ta=25℃
℃
Symbol
Limit
Unit
Test Conditions
V(BR)DSS
1000
V
VGS=0V, ID=250µΑ
RDS(ON)
3.5
Ω
VGS=10V, ID=2.6Α
ID@25℃
4.3
A
VGS=10V
ID@100℃
2.7
A
VGS=10V
Tj
-55~150 ℃
TSTR
-55~150 ℃
Pd
150 W
@Tc=25℃