Gunter Semiconductor GmbH GFCG40 N Channel High voltage, Power MOSFET Chip Specification General Description: * Advanced Process Technology * Dynamic dV/dt Rating * 150℃ ℃ Operating Temperature * Fast Switching * Fully Avalanche Rated * High breakdown voltage Mechanical Data: D23 Dimension 5.64mm x 5.64mm 480 µm Thickness: Metallization: Al Top : : CrNiAg / Au Backside : Suggested Bonding Conditions: Die Mounting: Solder Perform 95/5 PbSn or 92.5./2.5/5 PbAgIn 10 mil Al Source Bonding Wire: Absolute Maximum Rating Characteristics Drain-to-Source Breakdown Voltage Static Drain-to - Source On-resistance Continuous Drain current ( in target packag Continuous Drain current ( in target packag Operation Junction Storage Temperature Target Device: IRFG40 TO-247AC @Ta=25℃ ℃ Symbol Limit Unit Test Conditions V(BR)DSS 1000 V VGS=0V, ID=250µΑ RDS(ON) 3.5 Ω VGS=10V, ID=2.6Α ID@25℃ 4.3 A VGS=10V ID@100℃ 2.7 A VGS=10V Tj -55~150 ℃ TSTR -55~150 ℃ Pd 150 W @Tc=25℃