GSG GFCE30

Gunter Semiconductor GmbH
GFCE30
N Channel Power MOSFET with low RDS(on)
Chip Specification
General Description:
* Advanced Process Technology
* Dynamic dV/dt Rating
* 150℃
℃ Operating Temperature
* Fast Switching
* Fully Avalanche Rated
* Low RDS(on)
Mechanical Data:
D17
Dimension 4.42mm x 5.23mm
480 µm
Thickness:
Metallization:
Al
Top :
:
CrNiAg / Au
Backside :
Suggested Bonding Conditions:
Die Mounting: Solder Perform
95/5 PbSn or 92.5./2.5/5 PbAgIn
Source Bonding Wire: 10 mil Al
Absolute Maximum Rating
Characteristics
@Ta=25℃
℃
Symbol
Limit
Unit
Test Conditions
Drain-to-Source Breakdown Voltage
V(BR)DSS
800
V
VGS=0V, ID=250µΑ
Static Drain-to - Source On-resistance
RDS(ON)
3.2
Ω
VGS=10V, ID=2.5A
Continuous Drain current ( in target package)
ID@25℃
27
A
VGS=10V
Continuous Drain current ( in target package)
ID@100℃
19
A
VGS=10V
Tj
-55~150
℃
TSTR
-55~150
℃
PD
125
W
Operation Junction
Storage Temperature
Target Device: IRFBE30
TO-220AB
@Tc=25℃