Gunter Semiconductor GmbH GLC014 N Channel Power MOSFET FOR LOGIC DRIVE Chip Specification General Description: * Advanced Process Technology * Dynamic dv/dt Rating * 175℃ ℃ Operating Temperature * Fast Switching * Fully Avalanche Rated * RDS(ON) rated at VGS = 5V * Ease of parallel Mechanical Data: D2 Dimension 1.92mm x 2.18mm Thickness: 400 µm Metallization: Top : : Al Backside : CrNiAg / Au Suggested Bonding Conditions: Die Mounting: Solder Perform 95/5 PbSn or 92.5./2.5/5 PbAgIn Source Bonding Wire: 5 mil Al Absolute Maximum Rating Characteristics @Ta=25℃ ℃ Symbol Limit Unit Test Conditions Drain-to-Source Breakdown Voltage V(BR)DSS 60 V VGS=0V, ID=250µΑ Static Drain-to - Source On-resistance RDS(ON) 0.2 Ω VGS=5V, ID=6Α Continuous Drain current ( in target package) ID@25℃ 10 A VGS= 5V Continuous Drain current ( in target package) ID@100℃ 7.2 A VGS= 5V Tj -55~175 ℃ TSTR -55~175 ℃ PD 43 W Operation Junction Temperature Storage Temperature Target Device: IRLZ14 TO-220AB @Tc=25℃