BIC801M Bias Controlled Monolithic IC VHF/UHF RF Amplifier ADE-208-705C (Z) 4th. Edition Nov. 1998 Features • Bias Controlled Monolithic IC (No external DC biasing voltage on gate1.); To reduce using parts cost & PC board space. • High gain; PG = 27 dB typ. (at f = 200 MHz), PG = 21.5 dB typ. (at f = 900 MHz) • Low noise; NF = 1.1 dB typ. (at f = 200 MHz), NF = 1.75 dB typ. (at f = 900 MHz) • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. • Provide mini mold packages; MPAK-4R(SOT-143mod) Outline Notes: 1. Marking is “AY–”. 2. BIC801M is individual type number of HITACHI BICMIC. BIC801M Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDS 6 V Gate1 to source voltage VG1S +6 –0 V Gate2 to source voltage VG2S +6 –0 V Drain current ID 20 mA Channel power dissipation Pch 150 mW Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 6 — — V I D = 200µA VG2S = 0,VG1 = open Gate1 to source breakdown voltage V(BR)G1SS +6 — — V I G1 = +10µA VG2S = VDS = 0 Gate2 to source breakdown voltage V(BR)G2SS +6 — — V I G2 = +10µA VG1S = VDS = 0 Gate1 to source cutoff current I G1SS — — +100 nA VG1S = +5V VG2S = VDS = 0 Gate2 to source cutoff current I G2SS — — +100 nA VG2S = +5V VG1S = VDS = 0 Gate2 to source cutoff voltage VG2S(off) 0.5 0.7 1.0 V VDS = 5V, ID = 100µA VG1 = open Drain current I DS(op) 7 10 13 mA VDS = 5V , VG2S = 4V VG1 = open Forward transfer admittance |yfs| 22 27 32 mS VDS = 5V, ID = 10mA VG2S =4V, f = 1kHz Input capacitance c iss 1.6 2.0 2.3 pF VDS = 5V, VG2S =4V Output capacitance c oss 0.6 1.0 1.4 pF VG1 = open Reverse transfer capacitance c rss — 0.024 0.05 pF f = 1MHz Power gain 23 27 — dB VDS = 5V, VG2S =4V PG1 VG1 = open Noise figure NF1 — 1.1 1.6 dB f = 200MHz Power gain PG2 17 21.5 — dB VDS = 5V, VG2S =4V VG1 = open Noise figure 2 NF2 — 1.75 2.3 dB f = 900MHz BIC801M Main Characteristics 3 BIC801M 4 BIC801M 5 BIC801M 6 BIC801M 7 BIC801M 8 BIC801M 9 BIC801M Sparameter (V DS = VG1 = 5V, VG2S = 4V, VG1 = open, Zo = 50Ω) S11 S21 S12 S22 f (MHz) MAG ANG MAG ANG MAG ANG MAG ANG 50 0.994 –3.1 2.54 175.5 0.00132 50.0 0.978 –2.4 100 0.993 –6.6 2.52 171.0 0.00201 59.8 0.981 –5.1 150 0.988 –10.5 2.51 166.4 0.00228 66.1 0.979 –7.5 200 0.983 –14.1 2.49 161.6 0.00323 66.7 0.979 –10.1 250 0.977 –17.9 2.46 157.2 0.00420 70.2 0.976 –12.7 300 0.970 –21.8 2.43 152.8 0.00514 71.9 0.974 –15.1 350 0.963 –25.4 2.40 148.6 0.00532 76.1 0.971 –17.6 400 0.951 –28.8 2.37 143.7 0.00629 74.2 0.969 –20.1 450 0.943 –32.4 2.34 139.4 0.00665 70.8 0.966 –22.4 500 0.933 –35.4 2.29 135.1 0.00700 71.6 0.962 –24.9 550 0.918 –39.1 2.25 131.1 0.00756 69.3 0.958 –27.3 600 0.906 –42.0 2.21 127.2 0.00790 68.1 0.954 –29.7 650 0.895 –45.5 2.17 123.0 0.00836 67.6 0.951 –32.2 700 0.882 –48.7 2.13 119.4 0.00820 66.1 0.946 –34.4 750 0.879 –51.1 2.09 115.6 0.00818 65.9 0.942 –36.8 800 0.860 –54.6 2.05 111.7 0.00819 66.5 0.938 –39.2 850 0.845 –58.3 2.02 107.8 0.00798 70.7 0.933 –41.5 900 0.835 –60.7 1.96 104.2 0.00787 71.9 0.929 –43.8 950 0.827 –63.3 1.92 100.5 0.00727 73.1 0.924 –46.2 1000 0.812 –66.4 1.88 97.0 0.00758 75.6 0.919 –48.5 10 BIC801M Package Dimensions Unit: mm 11 BIC801M Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. 12