HUASHAN HFF2N60

N-Channel MOSFET
Shantou Huashan Electronic Devices Co.,Ltd.
HFF2N60
█ APPLICATIONSL
TO-220F
High-Speed Switching.
█ ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
T stg ——Storage Temperature……………………………-55~150℃
1―G
T j ——Operating Junction Temperature …………………………150℃ 2―D
PD —— Allowable Power Dissipation(T c=25℃)…………………23W
3―S
VDSS —— Drain-Source Voltage ………………………………… 600V
VGSS —— Gate-Source Voltage …………………………………±30V
ID —— Drain Current(T c=25℃)……………………………………2.0A
█ ELECTRICAL CHARACTERISTICS(Ta=25℃)
Symbol BVDSS
IDSS
Characteristics Min Typ Max Unit Test Conditions Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
600
2.0
VGS(th)
Gate –Source Leakage Current
Gate Threshold Voltage
RDS(on)
gfs
Static Drain-Source On-Resistance
Forward Transconductance
3.8 5.0 2.05 Input Capacitance
Output Capacitance
180 235 Ω VGS=10V, ID =1.0A S
VDS = 40V , ID =1.0A
*
pF 20
25
pF
VDS =25V, VGS=0,f=1MHz 4.3
3
pF
Turn - On Delay Time
9
28
nS
Rise Time
25
60
nS
Turn - Off Delay Time
24
58
nS
Fall Time
28
66
nS
Qg
Total Gate Charge
8.5
12
nC
VDD =300V,
ID =2A (峰值) RG= 25 Ω * VDS =480V
Qgs
Gate–Source Charge
1.3
nC
VGS=10V
Qgd
Gate–Drain Charge
4.1
nC
ID=2A *
2.0 A 1.4 V 5.5 ℃/W IGSS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Is
Reverse Transfer Capacitance
Continuous Source Current
Diode Forward Voltage
Thermal Resistance,
Rth(j-c)
Junction-to-Case
*Pulse Test:Pulse Width≤300μs,Duty Cycle≤2%
VSD
10 V
ID=250μA ,VGS=0V
μA VDS =600V,VGS=0 ±100 nA VGS=±30V , VDS =0V 4.0
V
VDS = VGS , ID =250μA
IS =2.0A , VGS=0
Shantou Huashan Electronic Devices Co.,Ltd.
N-Channel MOSFET
HFF2N60
Shantou Huashan Electronic Devices Co.,Ltd.
N-Channel MOSFET
HFF2N60
Shantou Huashan Electronic Devices Co.,Ltd.
N-Channel MOSFET
HFF2N60
Shantou Huashan Electronic Devices Co.,Ltd.
N-Channel MOSFET
HFF2N60