N-Channel MOSFET Shantou Huashan Electronic Devices Co.,Ltd. HFR1N60 █ APPLICATIONSL TO-92 high-Speed Switching. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） T stg ——Storage Temperature……………………………－55~150℃ T j ——Operating Junction Temperature …………………………150℃ 1―G PD —— Allowable Power Dissipation（T c=25℃）…………………1W 2―D 3―S VDSS —— Drain-Source Voltage ………………………………… 600V VGSS —— Gate-Source Voltage …………………………………±30V ID —— Drain Current（T c=25℃）……………………………………0.4A IDM —— Drain Current（Pulsed）……………………………………1.6A █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol BVDSS IDSS Characteristics Min Typ Max Unit Test Conditions ５０ V ID=250μA ,VGS=0V μＡ VDS =600V，VGS=0 Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current 600 Gate –Source Leakage Current Gate Threshold Voltage 2.0 ±100 4.0 ｎＡ VGS=±30V , VDS =0V V VDS = VGS , ID =250μA Static Drain-Source On-Resistance ９．３ １１．５ ? Forward Transconductance ０．７５ S Input Capacitance Output Capacitance １３０ １７０ VDS = 40V , ID =0.3A* pF 19 25 pF VDS =25V, VGS=0,f=1ＭＨｚ 3.5 6 pF Turn - On Delay Time 7 24 nS Rise Time 21 52 nS Turn - Off Delay Time 13 36 nS Fall Time 27 64 nS Qg Total Gate Charge 4.8 6.2 nC Qgs Gate–Source Charge 0.7 nC VDS =480V，ＩＤ＝１．１Ａ Qgd Gate–Drain Charge 2.7 nC ＶＧＳ＝１０Ｖ ＊ ０．３ Ａ １．４ Ｖ １４０ ℃／Ｗ IGSS VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Is Reverse Transfer Capacitance Continuous Source Current Diode Forward Voltage Thermal Resistance， Rth（ j-A） Junction-to-Ambient *Pulse Test：Pulse Width≤300μs，Duty Cycle≤2% VSD VGS=10V, ID =0.2A VDD =300V,ID =1.1A RG= 25 Ω * IS =0.4A , VGS=0 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel MOSFET HFR1N60 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel MOSFET HFR1N60 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel MOSFET HFR1N60 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel MOSFET HFR1N60