NPN S I L I C O N TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HP50 █ APPLICATIONS High Voltage And switching. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-220 T stg ——Storage Temperature………………………… －65~150℃ T j ——Junction Temperature……………………………… 150℃ PC——Collector Dissipation（T c=25℃）…………………… 40W VCBO ——Collector-Base Voltage………………………… 500V VCEO——Collector-Emitter Voltage……………………… 400V 1―Base，B VEBO ——Emitter-Base Voltage……………………………… 5V 2―Collector，C 3―Emitter, E IC——Collector Current（DC）………………………………… 1A IC——Collector Current（Pulse）………………………………2A IB——Base Current…………………………………………0.6A █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Min Typ Max Unit ４００ Ｖ Collector Cut-off Current １ Emitter-Base Cutoff Current １ ｍＡ VCE=300V, IB=0 ｍＡ VEB=5V, IC=0 Collector Cut-off Current １ HFE（1） DC Current Gain ２２ １５０ HFE（2） １０ VCE=10V, IC=1A HFE ２０ VCE(sat) Collector- Emitter Saturation Voltage １ Ｖ VCE=10V, IC=0.2A,f=1ＭＨｚ IC=1A, IB =0.2A VBE(on) １．５ Ｖ VCE=10V, IC=1A １０ ＲθＪＣ ＲθＪＡ BVCEO ICEO IEBO ICES fT Characteristics Collector-Emitter Breakdown Voltage Base-Emitter On Voltage Current Gain-Bandwidth Product Test Conditions IC=30mA, IB=0 ｍＡ VCE=500V, VEB=0 VCE=10V, IC=0.3A ＭＨｚ VCE=10V,IC=0.1A,f=2ＭＨｚ ３．１２５ ℃／Ｗ ６２．５ ℃／Ｗ Shantou Huashan Electronic Devices Co.,Ltd. NPN S I L I C O N TRANSISTOR HP50 Figure 1。Power derating Figure 3。Turn-On Time Figure 2。Switching Time Equivalent Circuit Figure 4。Active Region Safe Operating Area 4 5 Figure 5。Thermal Response Shantou Huashan Electronic Devices Co.,Ltd. NPN S I L I C O N TRANSISTOR HP50 Figure 7。Temperature Coefficients Figure 6。Turn-Off Time Figure 8。Inductive Load Switching Figure 9。DC Current Gain Figure 10。“On”Voltages