ETC AO4420L

Rev 4: Nov 2004
AO4420, AO4420L ( Green Product )
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO4420 uses advanced trench technology to
provide excellent RDS(ON), shoot-through immunity and
body diode characteristics.This device is suitable for
use as a synchronous switch in PWM applications.
AO4420L is offered in a lead-free package. AO4420L
( Green Product ) is offered in a lead-free package.
VDS (V) = 30V
ID = 13.7A
RDS(ON) < 10.5mΩ (VGS = 10V)
RDS(ON) < 12mΩ (VGS = 4.5V)
D
S
S
S
G
D
D
D
D
G
S
SOIC-8
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
Continuous Drain
TA=25°C
Current A
ID
TA=70°C
B
Pulsed Drain Current
IDM
TA=25°C
Power Dissipation
TA=70°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-AmbientA
A
Maximum Junction-to-Ambient
C
Maximum Junction-to-Lead
PD
Symbol
Alpha & Omega Semiconductor, Ltd.
Units
V
V
±12
13.7
9.7
A
60
3.1
W
2
-55 to 150
TJ, TSTG
t ≤ 10s
Steady-State
Steady-State
Maximum
30
RθJA
RθJL
Typ
28
54
21
°C
Max
40
75
30
Units
°C/W
°C/W
°C/W
AO4420, AO4420L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VGS(th)
ID(ON)
Conditions
Min
ID=250µA, VGS=0V
VDS=24V, VGS=0V
30
Typ
Max
0.004
1
5
µA
1.1
100
2
nA
V
8.3
12.5
9.7
10.5
15
12
mΩ
1
S
V
5
A
4050
pF
V
TJ=55°C
VDS=0V, VGS= ±12V
VDS=VGS ID=250µA
VGS=4.5V, VDS=5V
0.6
40
VGS=10V, ID=13.7A
RDS(ON)
Static Drain-Source On-Resistance
gFS
VSD
IS
VGS=4.5V, ID=12.7A
Forward Transconductance
VDS=5V, ID=13.7A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=125°C
30
Units
A
37
0.76
mΩ
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
VGS=0V, VDS=15V, f=1MHz
Crss
Rg
256
168
VGS=0V, VDS=0V, f=1MHz
0.86
1.1
Ω
36
VGS=10V, VDS=15V, ID=13.7A
30.5
4.6
8.6
nC
nC
nC
5.5
3.4
49.8
5.9
22.5
12.5
9
7
75
11
28
16
ns
ns
ns
ns
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
3656
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
VGS=10V, VDS=15V, RL=1.1Ω,
RGEN=0Ω
IF=13.7A, dI/dt=100A/µs
Body Diode Reverse Recovery Charge IF=13.7A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
pF
pF
ns
nC
A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value
in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4420, AO4420L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
60
VGS=5V
50
25
VGS =2.5V
20
ID(A)
ID(A)
40
30
20
125°C
15
10
VGS =2.0V
10
25°C
5
0
0
0
1
2
3
4
5
0.0
0.5
VDS(Volts)
1.0
1.5
2.0
2.5
3.0
VGS(Volts)
Figure 2: Transfer Characteristics
Figure 1: On-Regions Characteristics
1.8
12
RDS(ON)(mΩ)
Normalize ON-Resistance
ID=13.7A
11
VGS =4.5V
10
9
8
VGS =10V
7
1.6
VGS=4.5V
1.4
VGS=10V
1.2
1.0
6
0
5
10
15
20
25
30
0.8
0
ID(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1E+01
30
ID=13.7A
25
20
1E+00
1E-01
125°C
IS(A)
RDS(ON)(mΩ)
25
15
10
125°C
1E-02
1E-03
25°C
1E-04
5
25°C
1E-05
0
0
2
4
6
8
VGS(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
10
0.0
0.2
0.4
0.6
0.8
VSD(Volts)
Figure 6: Body-Diode Characteristics
1.0
AO4420, AO4420L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
10000
VDS=15V
ID=13.7A
Ciss
Capacitance (pF)
VGS(Volts)
4
3
2
1000
Coss
1
Crss
100
0
0
10
20
30
0
40
100
ID(A)
0.1s
1s
1
1ms
Power (W)
10ms
10s
T J(Max) =150°C
T A =25°C
1
ZθJA Normalized Transient
Thermal Resistance
25
30
30
20
10
100
0
0.01
VDS(Volts)
Figure 9: Maximum Forward Biased Safe Operating
Area (Note E)
10
20
10
DC
0.1
0.1
15
40
100µs
10
10
50
10µs
RDS(ON)
limited
5
VDS(Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
D=T on/T
T J,PK =T A+PDM.ZθJA.RθJA
RθJA=40°C/W
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
T on
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (S)
Figure 11: Normalized Maximum Transient Thermal Impedence
Alpha & Omega Semiconductor, Ltd.
100
1000
Document No.
ALPHA & OMEGA
Version
Title
SEMICONDUCTOR, LTD.
SO-8 PACKAGE MARKING DESCRIPTION
Standard product
NOTE:
LOGO
4420
F&A
Y
W
LT
- AOS LOGO
- PART NUMBER CODE.
- FOUNDRY AND ASSEMBLY LOCATION
- YEAR CODE
- WEEK CODE.
- ASSEMBLY LOT CODE
PART NO. DESCRIPTION
AO4420
AO4420L
Standard product
Green product
CODE
4420
4420
Green product
PD-00139
rev C
AO4420 Marking Description
8
1
RECOMMENDED LAND PATTERN
θ
SEATING PLANE
UNIT: mm
GAUGE PLANE
MIN
1.35
0.10
1.25
0.31
0.17
4.80
3.80
5.80
0.25
0.40
0°
NOM
1.65
−−−
1.50
−−−
−−−
4.90
3.90
1.27 BSC
6.00
−−−
−−−
−−−
MAX
1.75
0.25
1.65
0.51
0.25
5.00
4.00
0.228
0.010
0.016
0°
MIN
0.053
0.004
0.049
0.012
0.007
0.189
0.150
NOM
0.065
−−−
0.059
−−−
−−−
0.193
0.154
0.050 BSC
0.236
−−−
−−−
−−−
0.244
0.020
0.050
8°
MAX
0.069
0.010
0.065
0.020
0.010
0.197
0.157
DIMENSIONS IN INCHES
6.20
0.50
1.27
8°
DIMENSIONS IN MILLIMETERS
NOTE
1. ALL DIMENSIONS ARE IN MILLMETERS.
2.DIMENSIONS ARE INCLUSIVE OF PLATING.
3.PACKAGE BODY SIZES EXCLUDE MOLD FLASH AND
GATE BURRS.
4. DIMENSION L IS MEASURED IN GAUGE PLANE.
5. CONTROLLING DIMENSION IS MILLIMETER. CONVERTED
INCH DIMENSIONS ARE NOT NECESSARILY EXACT.
SYMBOLS
A
A1
A2
b
c
D
E1
e
E
h
L
θ
ALPHA & OMEGA
SEMICONDUCTOR, LTD.
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