Inchange Semiconductor Product Specification 2N3054 2N3054A Silicon NPN Power Transistors DESCRIPTION ・With TO-66 package APPLICATIONS ・Designed for general purpose switching and amplifier applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol 体 导 半 固电 Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VCBO Collector-base voltage Open emitter VCEO Collector-emitter voltage Open base VEBO Emitter-base voltage IC IB PD Collector current INC DU N O IC Base current 2N3054 Power dissipation UNIT 90 V 55 V 7 V 4 A 2 A CTOR M E S E HANG Open collector VALUE 25 TC=25℃ W 2N3054A 75 Tj Junction temperature 200 ℃ Tstg Storage temperature -65~200 ℃ MAX UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER 2N3054 7.0 2N3054A 2.33 ℃/W Thermal resistance junction to case Inchange Semiconductor Product Specification 2N3054 2N3054A Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO Collector-emitter breakdown voltage IC=0.1A ; IB=0 VCEsat-1 Collector-emitter saturation voltage IC=0.5A ;IB=50mA 1.0 V VCEsat-2 Collector-emitter saturation voltage IC=3A; IB=1A 6.0 V VBE Base -emitter on voltage IC=0.5A ; VCE=4V 1.7 V ICEV Collector cut-off current VCE=90V;VBE(off)=1.5V TC=150℃ 1.0 6.0 mA ICEO Collector cut-off current VCE=30V; IB=0 0.5 mA IEBO Emitter cut-off current VEB=7V; IC=0 1.0 mA hFE-1 DC current gain IC=0.1A ; VCE=10V DC current gain IC=1A ; VCE=2V hFE-2 fT 半导体 固电 CONDITIONS MIN R O T C NDU 2 8 3.0 UNIT V 40 IC=0.2A ; VCE=10V;f=1MHz INC MAX 55 O C I M E S E G HAN Transition frequency TYP. 80 Inchange Semiconductor Product Specification 2N3054 2N3054A Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 半 固电 R O T C NDU O C I M E S E G HAN INC Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification 2N3054 2N3054A Silicon NPN Power Transistors 体 导 半 固电 R O T C NDU O C I M E S E G HAN INC 4