Inchange Semiconductor Product Specification 2N5466 2N5467 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High-voltage capability ·Fast switching speeds ·Low collector saturation voltage APPLICATIONS ·They are intended for use in off-line power supplies ,inverter and converter circuits PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS 2N5466 VCBO Collector-base voltage VALUE UNIT 500 Open emitter 2N5467 V 700 VCEO Collector-emitter voltage Open base VEBO Emitter-base voltage Open collector 400 V 7 V IC Collector current 3 A ICM Collector current-peak 5 A IB Base current 1 A PD Total Power Dissipation 140 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~200 ℃ VALUE UNIT 1.48 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification 2N5466 2N5467 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;IB=0 VCEsat Collector-emitter saturation voltage IC=2A; IB=0.4A 2.0 V VBEsat Base-emitter saturation voltage IC=2A; IB=0.4A 2.0 V ICBO Collector cut-off current VCB=ratedVCBO; IE=0 1.0 mA ICEV Collector cut-off current VCE=ratedVCEO;VBE(off)=1.5V TC=125℃ 1.0 5.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 1.0 mA hFE-1 DC current gain IC=1A ; VCE=4V 15 hFE-2 DC current gain IC=2A ; VCE=4V 8 Trainsistion frequency IC=1A ; VCE=10V;f=1MHz fT CONDITIONS 2 MIN TYP. MAX 400 2.5 UNIT V 45 MHz Inchange Semiconductor Product Specification 2N5466 2N5467 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3