Inchange Semiconductor Product Specification 2N6055 2N6056 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·DARLINGTON ·Complement to type 2N6053;2N6054 APPLICATIONS ·General-purpose power amplifier and low frequency swithing applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS 2N6055 VCBO Collector-base voltage 60 Open base 2N6056 VEBO V 80 2N6055 Collector-emitter voltage Emitter-base voltage UNIT 60 Open emitter 2N6056 VCEO VALUE V 80 Open collector 5 V IC Collector current 8 A ICM Collector current-peak 16 A IB Base current 120 mA PD Total Power Dissipation 100 W Tj Junction temperature 200 ℃ Tstg Storage temperature -65~200 ℃ VALUE UNIT 1.75 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6055 2N6056 CHARACTERISTICS Tm=25℃ unless otherwise specified SYMBOL VCEO(SUS) PARAMETER Collector-emitter sustaining voltage CONDITIONS 2N6055 MIN TYP. MAX UNIT 60 IC=0.1 A ;IB=0 2N6056 V 80 VCEsat-1 Collector-emitter saturation voltge IC=4A ;IB=16mA 2.0 V VCEsat-2 Collector-emitter saturation voltage IC=8A ;IB=80mA 3.0 V Base-emitter saturation voltage IC=8A ;IB=80mA 4.0 V VBE Base-emitter on voltage IC=4A ; VCE=3V 2.8 V ICEO Collector cut-off current 0.5 mA VBEsat 2N6055 ICEX VCE=30V; IB=0 2N6056 VCE=40V; IB=0 2N6055 VCE=60V; VBE(off)=1.5V TC=150℃ 0.5 5.0 2N6056 VCE=80V; VBE(off)=1.5V TC=150℃ 0.5 5.0 2.0 Collector cut-off current mA IEBO Emitter cut-off current VEB=5V; IC=0 hFE-1 DC current gain IC=4A ; VCE=3V 750 hFE-2 DC current gain IC=8A ; VCE=3V 100 Cob Output capacitance IE=0;VCB=10V;f=0.1MHz 2 mA 18000 220 pF Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6055 2N6056 PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3