isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N6933/34/35 DESCRIPTION ·High Switching Speed ·High Voltage APPLICATIONS ·Off-line power supplies ·High voltage inverters ·Switching regulators ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCEV VCEX VCEO VEBO PARAMETER Collector-Emitter Voltage (VBE= -1.5V) Collector-Emitter Voltage Collector-Emitter Voltage VALUE 2N6933 450 2N6934 550 2N6935 650 2N6933 350 2N6934 400 2N6935 450 2N6933 300 2N6934 350 2N6935 400 UNIT V V V Emitter-Base Voltage 8 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 23 A IB Base Current-Continuous 5 A IBM Base Current-Peak 7 A IE Emitter Current-Continuous 20 A IEM Emitter Current-Peak 30 A PC Collector Power Dissipation @ TC=25℃ 175 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ B THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.71 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N6933/34/35 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N6933 VCEO(SUS) Collector-Emitter Sustaining Voltage 2N6934 MIN MAX UNIT 300 IC= 0.2A ;L= 25mH 2N6935 V 350 400 V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 8 VCE(sat) Collector-Emitter Saturation Voltage IC= 15A; IB= 3A IC= 15A; IB= 3A; TC= 100℃ 1.0 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 15A; IB= 3A IC= 15A; IB= 3A; TC= 100℃ 1.5 1.5 V ICEV Collector Cutoff Current VCE= VCEV; VBE= -1.5V VCE= VCEV; VBE= -1.5V; TC= 100℃ 0.1 1.0 mA IEBO Emitter Cutoff Current VEB= 8V; IC=0 2.0 mA hFE DC Current Gain IC= 15A ; VCE= 3V COB Output Capacitance IE= 0;VCB= 10V,ftest= 1.0MHz 8 V 35 150 pF Switching Times; Resistive Load td Delay Time tr Rise Time ts Storage Time tf Fall Time isc Website：www.iscsemi.cn IC= 15A; IB1= -IB2= 3A; RL= 20Ω; VBB= -5V; VCC= 300V; tp= 30μs 2 0.1 μs 0.7 μs 2.5 μs 0.5 μs