ISC 2SA1265N

Inchange Semiconductor
Product Specification
2SA1265N
Silicon PNP Power Transistors
DESCRIPTION
·With TO-3P(I) package
·Complement to type 2SC3182
·2SA1265 with short pin
APPLICATIONS
·Power amplifier applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Fig.1 simplified outline (TO-3P(I)) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-140
V
VCEO
Collector-emitter voltage
Open base
-140
V
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current
-10
A
IB
Base current
-1
A
PT
Total power dissipation
100
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
B
TC=25℃
Inchange Semiconductor
Product Specification
2SA1265N
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-50mA ,IB=0
VCEsat
Collector-emitter saturation voltage
IC=-7A; IB=-0.7A
-0.8
-2.0
V
VBE
Base-emitter voltage
IC=-5A ; VCE=-5V
-1.0
-1.5
V
ICBO
Collector cut-off current
VCB=-140V; IE=0
-5
μA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-5
μA
hFE-1
DC current gain
IC=-1A ; VCE=-5V
55
hFE-2
DC current gain
IC=-5A ; VCE=5V
35
fT
Transition frequency
IC=-1A ; VCE=-5V
30
MHz
Cob
Output capacitance
IE=0 ; VCB=10V ;f=1MHz
480
pF
‹
CONDITIONS
hFE-1 Classifications
R
O
55-110
80-160
2
MIN
TYP.
MAX
-140
UNIT
V
160
Inchange Semiconductor
Product Specification
2SA1265N
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
Inchange Semiconductor
Product Specification
2SA1265N
Silicon PNP Power Transistors
4