Inchange Semiconductor Product Specification 2SD728 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・Complement to type 2SB692 APPLICATIONS ・For low frequency power amplifier and power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO PARAMETER CONDITIONS VALUE UNIT Collector-base voltage Open emitter 150 V Collector-emitter voltage Open base 150 V Emitter-base voltage Open collector 5 V 6 A 70 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SD728 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0 150 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 5 V Collector-emitter saturation voltage IC=5A ;IB=0.5A 2.0 V ICBO Collector cut-off current VCB=150V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE-1 DC current gain IC=1A ; VCE=5V 100 hFE-2 DC current gain IC=5A ; VCE=5V 20 VCEsat fT COB CONDITIONS MIN TYP. TOR 体 U 导 D 半 N O C 固电 I EM S E G N A INCH Transition frequency IC=1A ; VCE=5V Collector output capacitance IE=0 ;f=1MHz;VCB=10V 2 MAX UNIT 7 MHz 160 pF Inchange Semiconductor Product Specification 2SD728 Silicon NPN Power Transistors PACKAGE OUTLINE R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Fig.2 outline dimensions 3