ISC 2SD728

Inchange Semiconductor
Product Specification
2SD728
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3PN package
・Complement to type 2SB692
APPLICATIONS
・For low frequency power amplifier
and power switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
R
O
体
T
U
导
D
半
N
O
C
固电
I
EM
S
E
G
N
A
INCH
Absolute maximum ratings(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
PARAMETER
CONDITIONS
VALUE
UNIT
Collector-base voltage
Open emitter
150
V
Collector-emitter voltage
Open base
150
V
Emitter-base voltage
Open collector
5
V
6
A
70
W
IC
Collector current
PC
Collector power dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SD728
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=50mA ;IB=0
150
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ;IC=0
5
V
Collector-emitter saturation voltage
IC=5A ;IB=0.5A
2.0
V
ICBO
Collector cut-off current
VCB=150V; IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
0.1
mA
hFE-1
DC current gain
IC=1A ; VCE=5V
100
hFE-2
DC current gain
IC=5A ; VCE=5V
20
VCEsat
fT
COB
CONDITIONS
MIN
TYP.
TOR
体
U
导
D
半
N
O
C
固电
I
EM
S
E
G
N
A
INCH
Transition frequency
IC=1A ; VCE=5V
Collector output capacitance
IE=0 ;f=1MHz;VCB=10V
2
MAX
UNIT
7
MHz
160
pF
Inchange Semiconductor
Product Specification
2SD728
Silicon NPN Power Transistors
PACKAGE OUTLINE
R
O
体
T
U
导
D
半
N
O
C
固电
I
EM
S
E
G
N
A
INCH
Fig.2 outline dimensions
3