Inchange Semiconductor Product Specification 2SB1558 Silicon PNP Darlington Power Transistors DESCRIPTION ・With TO-3PI package ・Complement to type 2SD2387 APPLICATIONS ・For power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PI) and symbol 体 半导 Absolute maximum ratings(Ta=℃) 固电 SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector-emitter voltage Open base VEBO Emitter-base voltage Open collector IC IB OND Open emitter EMIC S E G AN INCH R O T UC CONDITIONS Collector current Base current TC=25℃ VALUE UNIT -140 V -140 V -5 V -8 A -0.1 A 80 W PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SB1558 Silicon PNP Darlington Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=-7A ;IB=-7mA -2.5 V VBE Base-emitter on voltage IC=-7A ; VCE=-5V -3.0 V ICBO Collector cut-off current VCB=-140V; IE=0 -5 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -5 μA hFE-1 DC current gain IC=-7A ; VCE=-5V 5000 hFE-2 DC current gain IC=-12A ; VCE=-5V 2000 Cob Output capacitance fT CONDITIONS 导体 半 电 固 A 9000-18000 C 15000-30000 2 MAX -140 UNIT V 30000 170 R O T UC D N O IC IC=-1A ; VCE=-5V M E S GE N A H INC 5000-12000 B TYP. IE=0 ; VCB=-10V;f=1MHz Transition frequency hFE-1 Classifications MIN 30 pF MHz Inchange Semiconductor Product Specification 2SB1558 Silicon PNP Darlington Power Transistors PACKAGE OUTLINE 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3