ISC 2SA1553

isc Product Specification
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
2SA1553
DESCRIPTION
·High Current Capability
·High Power Dissipation
·High Collector-Emitter Breakdown Voltage: V(BR)CEO= -230V(Min)
·Complement to Type 2SC4029
APPLICATIONS
·Power amplifier applications
·Recommend for 120W high fidelity audio frequency amplifier
output stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-230
V
VCEO
Collector-Emitter Voltage
-230
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-15
A
IB
Base Current-Continuous
-1.5
A
PC
Collector Power Dissipation
@ TC=25℃
150
W
TJ
Junction Temperature
150
℃
-55~150
℃
B
Tstg
Storage Temperature Range
isc Website:www.iscsemi.cn
isc Product Specification
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
2SA1553
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= -50mA ; IB= 0
VCE(sat)
Collector-Emitter Saturation Voltage
IC= -8.0A; IB= -0.8A
-3.0
V
VBE(on)
Base-Emitter On Voltage
IC= -7A ; VCE= -5V
-1.5
V
ICBO
Collector Cutoff Current
VCB= -230V ; IE= 0
-5
μA
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
-5
μA
hFE-1
DC Current Gain
IC= -1A ; VCE= -5V
55
hFE-2
DC Current Gain
IC= -7A ; VCE= -5V
35
COB
Output Capacitance
IE= 0;VCB= -10V;ftest= 1.0MHz
470
pF
Current-Gain—Bandwidth Product
IC=-1A ; VCE= -5V
25
MHz
fT
‹
CONDITIONS
O
55-110
80-160
isc Website:www.iscsemi.cn
TYP.
2
MAX
-230
UNIT
V
B
hFE-1 Classifications
R
MIN
160