isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1553 DESCRIPTION ·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= -230V(Min) ·Complement to Type 2SC4029 APPLICATIONS ·Power amplifier applications ·Recommend for 120W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -230 V VCEO Collector-Emitter Voltage -230 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A IB Base Current-Continuous -1.5 A PC Collector Power Dissipation @ TC=25℃ 150 W TJ Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1553 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -8.0A; IB= -0.8A -3.0 V VBE(on) Base-Emitter On Voltage IC= -7A ; VCE= -5V -1.5 V ICBO Collector Cutoff Current VCB= -230V ; IE= 0 -5 μA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -5 μA hFE-1 DC Current Gain IC= -1A ; VCE= -5V 55 hFE-2 DC Current Gain IC= -7A ; VCE= -5V 35 COB Output Capacitance IE= 0;VCB= -10V;ftest= 1.0MHz 470 pF Current-Gain—Bandwidth Product IC=-1A ; VCE= -5V 25 MHz fT CONDITIONS O 55-110 80-160 isc Website：www.iscsemi.cn TYP. 2 MAX -230 UNIT V B hFE-1 Classifications R MIN 160