Inchange Semiconductor Product Specification 2SC4278 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-247 package ・Complement to type 2SA1633 ・High current and high power capability APPLICATIONS ・For audio output applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-247) and symbol 体 导 半 Absolute maximum ratings(Tc=25℃) 固电 SYMBOL VCBO EM S E NG PARAMETER A H C IN D N O IC R O T UC CONDITIONS VALUE UNIT 150 V 150 V 6 V 10 A 100 W Collector-base voltage Open emitter Collector-emitter voltage Open base VEBO Emitter-base voltage Open collector IC Collector current (DC) PD Total power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ VCEO TC=25℃ Inchange Semiconductor Product Specification 2SC4278 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=25mA; IB=0 VCEsat Collector-emitter saturation voltage IC=5A ;IB=0.5A 1.5 V VBEsat Base-emitter saturation voltage IC=5A ;IB=0.5A 2.0 V ICBO Collector cut-off current VCB=150V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=6V; IC=0 0.1 mA hFE DC current gain IC=1A ; VCE=5V 体 导 半 fT Transition frequency 固电 D 60-120 A H C IN E 100-200 F 160-320 2 TYP. MAX 150 60 UNIT V 320 R O T UC D N O IC IC=1A ; VCE=10V EM S E NG hFE Classifications MIN 20 MHz Inchange Semiconductor Product Specification 2SC4278 Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 半 固电 EM S E NG A H C IN D N O IC Fig.2 Outline dimensions 3 R O T UC