ISC 2SC4278

Inchange Semiconductor
Product Specification
2SC4278
Silicon NPN Power Transistors
・
DESCRIPTION
・With TO-247 package
・Complement to type 2SA1633
・High current and high power capability
APPLICATIONS
・For audio output applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-247) and symbol
体
导
半
Absolute maximum ratings(Tc=25℃)
固电
SYMBOL
VCBO
EM
S
E
NG
PARAMETER
A
H
C
IN
D
N
O
IC
R
O
T
UC
CONDITIONS
VALUE
UNIT
150
V
150
V
6
V
10
A
100
W
Collector-base voltage
Open emitter
Collector-emitter voltage
Open base
VEBO
Emitter-base voltage
Open collector
IC
Collector current (DC)
PD
Total power dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
VCEO
TC=25℃
Inchange Semiconductor
Product Specification
2SC4278
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter breakdown voltage
IC=25mA; IB=0
VCEsat
Collector-emitter saturation voltage
IC=5A ;IB=0.5A
1.5
V
VBEsat
Base-emitter saturation voltage
IC=5A ;IB=0.5A
2.0
V
ICBO
Collector cut-off current
VCB=150V; IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=6V; IC=0
0.1
mA
hFE
DC current gain
IC=1A ; VCE=5V
体
导
半
fT
Transition frequency
固电
D
60-120
A
H
C
IN
E
100-200
F
160-320
2
TYP.
MAX
150
60
UNIT
V
320
R
O
T
UC
D
N
O
IC
IC=1A ; VCE=10V
EM
S
E
NG
‹ hFE Classifications
MIN
20
MHz
Inchange Semiconductor
Product Specification
2SC4278
Silicon NPN Power Transistors
PACKAGE OUTLINE
体
导
半
固电
EM
S
E
NG
A
H
C
IN
D
N
O
IC
Fig.2 Outline dimensions
3
R
O
T
UC