Inchange Semiconductor Product Specification 2SD2400 Silicon NPN Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SB1569 ・High transition frequency ・Collector power dissipation: PC=20W(TC=25℃) APPLICATIONS ・For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO PARAMETER CONDITIONS VALUE UNIT Collector-base voltage Open emitter 120 V Collector-emitter voltage Open base 120 V Emitter-base voltage Open collector 5 V 1.5 A 3 A IC Collector current ICM Collector current-peak PC Collector dissipation Ta=25℃ 2.0 TC=25℃ 20 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SD2400 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=1mA ;IB=0 120 V V(BR)CBO Collector-base breakdown voltage IC=50μA ;IE=0 120 V V(BR)EBO Emitter-base breakdown voltage IE=50μA ;IC=0 5 V VCEsat Collector-emitter saturation voltage IC=1A ;IB=0.1A 2.0 V VBEsat Base-emitter saturation voltage IC=1A ;IB=0.1A 1.5 V ICBO Collector cut-off current VCB=120V; IE=0 1.0 μA IEBO Emitter cut-off current VEB=4V; IC=0 1.0 μA hFE fT COB CONDITIONS MIN TYP. TOR 体 U 导 D 半 N O C 固电 I EM S E G N A INCH DC current gain IC=0.1A ; VCE=5V Transition frequency IC=0.1A ; VCE=5V;f=30MHz Collector output capacitance IE=0; VCB=10V; f=1MHz hFE Classifications D E F 60-120 100-200 160-320 2 60 MAX UNIT 320 80 MHz 20 pF Inchange Semiconductor Product Specification 2SD2400 Silicon NPN Power Transistors PACKAGE OUTLINE R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Fig.2 Outline dimensions 3