isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1530 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -150V(Min.) ·Complement to Type 2SD2337 APPLICATIONS ·Designed for low frequency power amplifier color TV vertical deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -2 A ICM Collector Current-Peak -5 A Collector Power Dissipation @ Ta=25℃ 1.5 PC TJ Tstg W Collector Power Dissipation @ TC=25℃ 20 Junction Temperature 150 ℃ -45~150 ℃ Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1530 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= -5mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA -3.0 V VBE(on) Base-Emitter On Voltage IC= -50mA; VCE= -4V -1.0 V ICBO Collector Cutoff Current VCB= -120V; IE= 0 -1 μA hFE-1 DC Current Gain IC= -50mA; VCE= -4V 60 hFE-2 DC Current Gain IC= -0.5A; VCE= -10V 60 CONDITIONS C 60-120 100-200 isc Website：www.iscsemi.cn 2 TYP. MAX UNIT -150 V -6 V B hFE-1 Classifications B MIN 200