ISC 2SC1367

Inchange Semiconductor
Product Specification
2SC1367
Silicon NPN Power Transistors
·
DESCRIPTION
·With TO-3 package
·Wide area of safe operation
APPLICATIONS
·For TV horizontal deflection output
applications
PINNING(see fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1000
V
VCEO
Collector-emitter voltage
Open base
600
V
VEBO
Emitter-base voltage
Open collector
5
V
1
A
50
W
IC
Collector current
PC
Collector power dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SC1367
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=100mA; IB=0
V(BR)EBO
Emitter-base breakdown votage
IE=1mA; IC=0
VCEsat
Collector-emitter saturation voltage
IC=0.5 A;IB=0.1 A
5.0
V
VBEsat
Base-emitter saturation voltage
IC=0.5 A;IB=0.1 A
1.5
V
ICBO
Collector cut-off current
VCB=1000V;IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
0.1
mA
hFE
DC current gain
IC=0.2A ; VCE=10V
Transition frequency
IC=0.1A ; VCE=10V
fT
CONDITIONS
2
MIN
TYP.
MAX
UNIT
600
V
5
V
30
120
6
MHz
Inchange Semiconductor
Product Specification
2SC1367
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3