Inchange Semiconductor Product Specification 2SC1418 Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·Large collector power dissipation APPLICATIONS ·For medium power amplifier applicattions PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 50 V VCEO Collector-emitter voltage Open base 50 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 2 A ICM Collector current-peak 3 A PC Collector power dissipation 20 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC1418 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified. SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=30mA ,IB=0 50 V V(BR)CBO Collector-base breakdown voltage IC=1mA ,IE=0 50 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ,IC=0 5 V VCEsat Collector-emitter saturation voltage IC=1A; IB=0.1A 1.0 V VBEsat Base-emitter saturation voltage IC=1A; IB=0.1A 1.5 V ICBO Collector cut-off current VCB=50V; IE=0 100 μA IEBO Emitter cut-off current VEB=5V; IC=0 100 μA hFE DC current gain IC=1A ; VCE=4V Transition frequency IC=0.5A ; VCE=10V fT CONDITIONS 2 MIN TYP. 35 MAX UNIT 320 5 MHz Inchange Semiconductor Product Specification 2SC1418 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3