Inchange Semiconductor Product Specification 2SD1037 Silicon NPN Power Transistors ・ DESCRIPTION ・With MT-200 package ・Excellent safe operating area ・High current capability APPLICATIONS ・For electrical supply ,DC-DC converters and low frequency power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (MT-200) and symbol Absolute maximum ratings (Ta=25°C) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 150 V VCEO Collector-emitter voltage Open base 120 V VEBO Emitter-base voltage Open collector 6 V 30 A 180 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SD1037 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=50mA; IB=0 VCEsat Collector-emitter saturation voltage IC=10 A;IB=1 A 0.5 V VBEsat Base-emitter saturation voltage IC=10 A;IB=1 A 1.5 V ICBO Collector cut-off current VCB=80V; IE=0 5 μA IEBO Emitter cut-off current VEB=6V; IC=0 5 μA hFE DC current gain IC=10A ; VCE=4V fT Transition frequency IC=1A ; VCE=4V 1.5 MHz COB Output capacitance IE=0; VCB=10V;f=1MHz 210 pF 2 MIN TYP. MAX 120 UNIT V 20 Inchange Semiconductor Product Specification 2SD1037 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3