isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC1907 DESCRIPTION ·Low Noise ·High Gain Bandwidth Product APPLICATIONS ·Designed for VHF TV tuner and local oscillator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 19 V VEBO Emitter-Base Voltage 2 V IC Collector Current-Continuous 50 mA IE Emitter Current-Continuous -50 mA PC Collector Power Dissipation @TC=25℃ 0.3 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC1907 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 10μA ; IE= 0 30 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 3mA ; RBE= ∞ 19 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 10μA ; IC= 0 2 V VCE(sat) Collector-Emitter Saturation Voltage IC= 20mA ; IB= 4mA 1.0 V ICBO Collector Cutoff Current VCB= 10V; IE= 0 0.5 μA hFE DC Current Gain IC= 10mA ; VCE= 10V 40 Current-Gain—Bandwidth Product IC= 10mA ; VCE= 10V 900 COB Output Capacitance IE= 0 ; VCB= 10V;f= 1.0MHz 1.0 2.0 pF rbb’ • CC Base Time Constant VCB= 10V,IC = 10 mA,f = 31.8 MHz 10 25 ps Oscillation Output Power VCB = 10 V,IC = 10mA;f = 930MHz 8 fT Pout isc Website：www.iscsemi.cn 2 1100 MHz mW INCHANGE Semiconductor isc Silicon NPN RF Transistor isc Website：www.iscsemi.cn isc RF Product Specification 2SC1907 isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor isc Website：www.iscsemi.cn 2SC1907 4