ISC 2SC1907

isc RF Product Specification
INCHANGE Semiconductor
isc Silicon NPN RF Transistor
2SC1907
DESCRIPTION
·Low Noise
·High Gain Bandwidth Product
APPLICATIONS
·Designed for VHF TV tuner and local oscillator applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
30
V
VCEO
Collector-Emitter Voltage
19
V
VEBO
Emitter-Base Voltage
2
V
IC
Collector Current-Continuous
50
mA
IE
Emitter Current-Continuous
-50
mA
PC
Collector Power Dissipation
@TC=25℃
0.3
W
TJ
Junction Temperature
150
℃
-55~150
℃
Tstg
Storage Temperature Range
isc Website:www.iscsemi.cn
isc RF Product Specification
INCHANGE Semiconductor
isc Silicon NPN RF Transistor
2SC1907
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CBO
Collector-Base Breakdown Voltage
IC= 10μA ; IE= 0
30
V
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 3mA ; RBE= ∞
19
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 10μA ; IC= 0
2
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 20mA ; IB= 4mA
1.0
V
ICBO
Collector Cutoff Current
VCB= 10V; IE= 0
0.5
μA
hFE
DC Current Gain
IC= 10mA ; VCE= 10V
40
Current-Gain—Bandwidth Product
IC= 10mA ; VCE= 10V
900
COB
Output Capacitance
IE= 0 ; VCB= 10V;f= 1.0MHz
1.0
2.0
pF
rbb’ • CC
Base Time Constant
VCB= 10V,IC = 10 mA,f = 31.8 MHz
10
25
ps
Oscillation Output Power
VCB = 10 V,IC = 10mA;f = 930MHz
8
fT
Pout
isc Website:www.iscsemi.cn
2
1100
MHz
mW
INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc Website:www.iscsemi.cn
isc RF Product Specification
2SC1907
isc RF Product Specification
INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc Website:www.iscsemi.cn
2SC1907
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