isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor BFQ591 DESCRIPTION ·High Power Gain ·High Current Gain Bandwidth Product ·Low Noise Figure APPLICATIONS ·Designed for use in MATV or CATV amplifiers and RF communications subscribers equipment. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous 200 mA PC Collector Power Dissipation @TC=25℃ 2.25 W TJ Junction Temperature 175 ℃ -65~150 ℃ Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor BFQ591 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CES Collector-Emitter Breakdown Voltage IC= 0.1mA ; IB= 0 15 V V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1m A ; IE= 0 20 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 0.1m A ; IC= 0 3 V ICBO Collector Cutoff Current VCB= 10V; IE= 0 hFE DC Current Gain IC= 70mA ; VCE= 8V Current-Gain—Bandwidth Product IC= 70mA ; VCE= 12V; f= 1GHz 7 GHz PG Power Gain IC= 70mA;VCE= 12V; f= 900MHz 11 dB PG Power Gain IC= 70mA;VCE= 12V; f= 2GHz 5.5 dB Cre Feedback Capacitance IE= 0 ; VCB= 12V; f= 1MHz 0.8 pF Insertion Power Gain IC= 70mA ; VCE= 12V; f= 1GHz 10 dB 700 mV fT ︱S21e︱2 VO Note: Output Voltage CONDITIONS note MIN TYP. MAX 0.1 60 isc Website：www.iscsemi.cn 2 μA 250 dim = 60 dB (DIN45004B); Vp = Vo; Vq = Vo −6 dB; fp = 795.25 MHz; fq = 803.25 MHz; fr = 803.25 MHz; measured @ f(p+q+r) = 793.25 MHz. UNIT INCHANGE Semiconductor isc Silicon NPN RF Transistor isc Website：www.iscsemi.cn isc RF Product Specification BFQ591 isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor isc Website：www.iscsemi.cn BFQ591 4