Inchange Semiconductor Product Specification 2SB1075 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・High collector-peak current ・Low collector saturation voltage APPLICATIONS ・For audio frequency output amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -50 V VCEO Collector-emitter voltage Open base -40 V VEBO Emitter-base voltage Open collector -5 V IC Collector current (DC) -2 A ICM Collector current-Peak -4 A PD Total power dissipation 1.2 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Ta=25℃ Inchange Semiconductor Product Specification 2SB1075 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-2mA ;IB=0 -40 V V(BR)CBO Collector-base breakdown voltage IC=-1mA ;IE=0 -50 V VCEsat Collector-emitter saturation voltage IC=-3.0A; IB=-0.3A*2 -1.0 V VBEsat Base-emitter saturation voltage IC=-2.0A ;IB=-0.2A*2 -1.5 V ICBO Collector cut-off current VCB=-50V; IE=0 -1 μA ICEO Collector cut-off current VCE=-10V; IE=0 -100 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -10 μA hFE DC current gain IC=-1A ; VCE=-5V*2 Transition frequency IC=-0.5A ; VCE=-5V*2 150 MHz Collector output capacitance IE=0; f=1MHz ; VCB=-20V 40 pF fT COB CONDITIONS Note: *2 pulse test hFE Classifications P Q R 50-100 80-160 120-220 2 MIN TYP. 50 MAX UNIT 220 Inchange Semiconductor Product Specification 2SB1075 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3