ISC 2SC1501

Inchange Semiconductor
Product Specification
2SC1501
Silicon NPN Power Transistors
DESCRIPTION
·With TO-126 package
·High breakdown voltage
·Large power dissipation
APPLICATIONS
·For medium power amplifier applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector
3
Base
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
300
V
VCEO
Collector-emitter voltage
Open base
300
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
0.1
A
ICM
Collector current-peak
0.15
A
PC
Collector power dissipation
10
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SC1501
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CBO
Collector-base breakdown voltage
IC=100μA;IE=0
300
V
V(BR)CEO
Collector-emitter breakdown voltage
IC=1mA; IB=0
300
V
V(BR)EBO
Emitter-base breakdown voltage
IE=100μA; IC=0
5
V
Collector-emitter saturation voltage
IC=100mA IB=10m A
5.0
V
VBE
Base-emitter on voltage
IC=50mA ; VCE=10V
1.2
V
hFE-1
DC current gain
IC=10mA ; VCE=10V
30
hFE-2
DC current gain
IC=50mA ; VCE=10V
30
ICBO
Collector cut-off current
VCB=300V ; IE=0
COB
Output capacitance
IE=0; VCB=30V;f=1MHz
8
pF
fT
Transition frequency
IE=20mA ; VCB=30V
55
MHz
VCEsat
‹
hFE-2 classifications
P
Q
R
S
30-60
50-100
80-150
100-200
2
200
100
μA
Inchange Semiconductor
Product Specification
2SC1501
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions
3