ISC 2SC2238

Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2238 2SC2238A 2SC2238B
DESCRIPTION
・With TO-220 package
・Complement to type 2SA968
・High breakdown votage
APPLICATIONS
・Power amplifier applications
・Driver stage amplifier applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
2SC2238
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
2SC2238A
Open emitter
Emitter-base voltage
180
2SC2238B
200
2SC2238
160
2SC2238A
UNIT
160
Open base
2SC2238B
VEBO
VALUE
180
V
V
200
Open collector
5
V
IC
Collector current
1.5
A
IE
Emitter current
-1.5
A
PT
Total power dissipation
25
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2238 2SC2238A 2SC2238B
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2SC2238
V(BR)CEO
Collector-emitter
breakdown voltage
2SC2238A
MAX
UNIT
IC=10mA; IB=0
V
180
200
Emitter-base breakdown voltage
IE=1mA; IC=0
Collector-emitter saturation voltage
IC=500A; IB=50mA
1.5
V
VBE
Base-emitter on voltage
IC=500mA ; VCE=5V
1.0
V
ICBO
Collector cut-off current
VCB=160V ;IE=0
1.0
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
1.0
μA
hFE
DC current gain
IC=100mA ; VCE=5V
Cob
Output capacitance
IE=0 ; VCB=10V,f=1MHz
25
pF
fT
Transition frequency
IC=100mA ; VCE=10V
100
MHz
VCEsat
‹
TYP.
160
2SC2238B
V(BR)EBO
MIN
hFE Classifications
O
Y
70-140
120-240
2
5
V
70
240
Inchange Semiconductor
Product Specification
2SC2238 2SC2238A 2SC2238B
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3