ISC 2SC4793

Inchange Semiconductor
Product Specification
2SC4793
Silicon NPN Power Transistors
DESCRIPTION
・With TO-220F package
・Complement to type 2SA1837
・High transition frequency
APPLICATIONS
・Power amplifier applications
・Driver stage amplifier applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
230
V
VCEO
Collector-emitter voltage
Open base
230
V
VEBO
Emitter-base voltage
Open collector
5
V
1
A
0.1
A
IC
Collector current
IB
Base current
PC
Collector dissipation
TC=25℃
20
Ta=25℃
2.0
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SC4793
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter breakdown voltage
IC=10mA ; IB=0
VCEsat
Collector-emitter saturation voltage
IC=0.5A IB=50mA
1.5
V
VBE
Base-emitter voltage
IC=0.5A ; VCE=5V
1.0
V
ICBO
Collector cut-off current
VCB=230V; IE=0
1.0
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
1.0
μA
hFE
DC current gain
IC=0.1A ; VCE=5V
COB
Output capacitance
IE=0; VCB=10V;f=1MHz
20
pF
fT
Transition frequency
IC=0.1A ; VCE=10V
100
MHz
2
MIN
TYP.
MAX
230
UNIT
V
100
320
Inchange Semiconductor
Product Specification
2SC4793
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
Inchange Semiconductor
Product Specification
2SC4793
Silicon NPN Power Transistors
4