ISC 2SA968B

Inchange Semiconductor
Product Specification
2SA968 2SA968A 2SA968B
Silicon PNP Power Transistors
DESCRIPTION
·With TO-220 package
·Complement to type 2SC2238
·High breakdown votage
APPLICATIONS
·Power amplifier applications
·Driver stage amplifier applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
2SA968
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
2SA968A
Open emitter
Emitter-base voltage
-180
2SA968B
-200
2SA968
-160
2SA968A
UNIT
-160
Open base
2SA968B
VEBO
VALUE
-180
V
V
-200
Open collector
-5
V
IC
Collector current
-1.5
A
IE
Emitter current
1.5
A
PT
Total power dissipation
25
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SA968 2SA968A 2SA968B
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2SA968
V(BR)CEO
Collector-emitter
breakdown voltage
2SA968A
MAX
UNIT
IC=-10mA; IB=0
V
-180
-200
Emitter-base breakdown voltage
IE=-1mA; IC=0
Collector-emitter saturation voltage
IC=-0.5A; IB=-50mA
-1.5
V
VBE
Base-emitter on voltage
IC=-500mA ; VCE=-5V
-1.0
V
ICBO
Collector cut-off current
VCB=-160V ;IE=0
-1.0
μA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-1.0
μA
hFE
DC current gain
IC=-100mA ; VCE=-5V
Cob
Output capacitance
IE=0 ; VCB=-10V,f=1MHz
30
pF
fT
Transition frequency
IC=-100mA ; VCE=10V
100
MHz
VCEsat
‹
TYP.
-160
2SA968B
V(BR)EBO
MIN
hFE Classifications
O
Y
70-140
120-240
2
-5
V
70
240
Inchange Semiconductor
Product Specification
2SA968 2SA968A 2SA968B
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3