ISC BFR93AW

isc RF Product Specification
INCHANGE Semiconductor
isc Silicon NPN RF Transistor
BFR93AW
DESCRIPTION
·High Power Gain
·High Current Gain Bandwidth Product
·Low Noise Figure
APPLICATIONS
·Designed for use in RF amplifiers ,mixers and oscillators
with signal frequencies up to 1 GHz.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
15
V
VCEO
Collector-Emitter Voltage
12
V
VEBO
Emitter-Base Voltage
2
V
IC
Collector Current-Continuous
35
mA
PC
Collector Power Dissipation
@TC=25℃
0.3
W
TJ
Junction Temperature
175
℃
-65~150
℃
Tstg
Storage Temperature Range
isc Website:www.iscsemi.cn
isc RF Product Specification
INCHANGE Semiconductor
isc Silicon NPN RF Transistor
BFR93AW
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
ICBO
Collector Cutoff Current
VCB= 5V; IE= 0
hFE
DC Current Gain
IC= 30mA ; VCE= 5V
40
Current-Gain—Bandwidth Product
IC= 30mA ; VCE= 5V; f= 500MHz
4
COB
Output Capacitance
Cre
fT
TYP.
MAX
UNIT
0.05
μA
5
GHz
IE= 0 ; VCB= 5V; f= 1MHz
0.7
pF
Feedback Frequency
IE= 0 ; VCB= 5V; f= 1MHz
0.6
pF
NF
Noise Figure
IC= 5mA ; VCE= 8V; f= 1GHz
1.5
dB
NF
Noise Figure
IC= 5mA ; VCE= 8V; f= 2GHz
2.1
dB
isc Website:www.iscsemi.cn
2
INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc Website:www.iscsemi.cn
isc RF Product Specification
BFR93AW
isc RF Product Specification
INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc Website:www.iscsemi.cn
BFR93AW
4
INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc Website:www.iscsemi.cn
isc RF Product Specification
BFR93AW
isc RF Product Specification
INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc Website:www.iscsemi.cn
BFR93AW
6
INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc Website:www.iscsemi.cn
isc RF Product Specification
BFR93AW