isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3502 DESCRIPTION ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = 200 V ·Complement to Type 2SA1380 APPLICATIONS ·Designed for ultrahigh-definition CRT display, video output applicaitons ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 0.1 A ICM Collector Current-Peak 0.2 A Collector Power Dssipation Ta=25℃ 1.2 W PC Collector Power Dssipation TC=25℃ Ti Tstg Junction Temperature Storage Temperature Range isc Website：www.iscsemi.cn 5 150 ℃ -55~150 ℃ isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3502 ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 10μA ; IE= 0 200 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; RBE= ∞ 200 V V(BR)EBO Emitter-Base Breakdown Vltage IE= 10μA ; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 20mA ;IB= 2mA 0.6 V VBE(sat) Base-Emitter Saturation Voltage IC= 20mA ;IB= 2mA 1.0 V ICBO Collector Cutoff Current VCB= 150V; IE= 0 0.1 μA IEBO Emitter Cutoff Current VEB= 4V; IC= 0 0.1 μA hFE DC Current Gain IC= 10m A ; VCE= 10V Current-Gain—Bandwidth Product IC= 10mA; VCE= 30V; 150 MHz Collector Capacitance IE= 0; VCB= 30V;ftest = 1MHz 1.7 pF fT COB PARAMETER hFE Classifications C D E F 40-80 60-120 100-200 160-320 isc Website：www.iscsemi.cn B B 40 320