Inchange Semiconductor Product Specification 2SC4689 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PML package ・Complementary to 2SA1804 ・Recommend for 70W high fidelity audio frequency amplifier output stage APPLICATIONS ・Power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 120 V VCEO Collector-emitter voltage Open base 120 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 8 A ICP Collector current-peak 16 A IB Base current 0.8 A PC Collector power dissipation 70 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC4689 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0 ICBO Collector cut-off current VCB=120V; IE=0 5 μA IEBO Emitter cut-off current VEB=5V; IC=0 5 μA hFE-1 DC current gain IC=1A ; VCE=5V 55 hFE-2 DC current gain IC=4A ; VCE=5V 35 Collector-emitter saturation voltage IC=6A ; IB=0.6A 0.35 2 V VBE Base-emitter voltage IC=4A ; VCE=5V 0.95 1.5 V fT Transition frequency IC=1A ; VCE=5V 30 MHz Collector output capacitance IE=0;VCB=10V;f=1MHz 190 pF VCE(sat) Cob CONDITIONS hFE-1 classifications R O 55-110 80-160 2 MIN TYP. MAX 120 UNIT V 160 75 Inchange Semiconductor Product Specification 2SC4689 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification 2SC4689 Silicon NPN Power Transistors 4