Inchange Semiconductor Product Specification 2SC5100 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3PML package ・Complement to type 2SA1908 APPLICATIONS ・Audio and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Absolute maximum ratings(Tc=25℃) SYMBOL VCBO PARAMETER CONDITIONS VALUE UNIT Collector-base voltage Open emitter 160 V Collector-emitter voltage Open base 120 V Emitter-base voltage Open collector 6 V Collector current 8 A IB Base current 3 A PC Collector power dissipation 75 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ VCEO VEBO IC TC=25℃ 1 Inchange Semiconductor Product Specification 2SC5100 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX V(BR)CEO Collector-emitter breakdown voltage IC=50mA; IB=0 VCEsat Collector-emitter saturation voltage IC=3 A;IB=0.3 A 0.5 V ICBO Collector cut-off current VCB=160V ;IE=0 10 μA IEBO Emitter cut-off current VEB=6V; IC=0 10 μA hFE DC current gain IC=3A ; VCE=4V fT Transition frequency IE=-0.5A ; VCE=12V 20 MHz COB Output capacitance IE=0; VCB=10V;f=1MHz 200 pF 120 UNIT V 50 180 R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Switching times ton ts tf Turn-on time IC=4A;RL=10Ω IB1=-IB2=0.4A VCC=40V Storage time Fall time hFE classifications O P Y 50-100 70-140 90-180 2 0.13 μs 3.50 μs 0.32 μs Inchange Semiconductor Product Specification 2SC5100 Silicon NPN Power Transistors PACKAGE OUTLINE R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification 2SC5100 Silicon NPN Power Transistors R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH 4