isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain: hFE = 2000(Min)@ IC= 3A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 120V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat) = 1.5V(Max)@ IC= 3A APPLICATIONS ·Designed for solenoid driver, relay and motor, series regulator, and general purpose applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak 10 A IB Base Current 1 A PC Collector Power Dissipation TC=25℃ 50 W Tj Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range isc Website：www.iscsemi.cn 2SD1769 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1769 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA, IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A ,IB= 3mA 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A ,IB= 3mA 2.0 V ICBO Collector Cutoff Current VCB= 120V, IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 20 mA hFE DC Current Gain IC= 3A ; VCE= 2V Current-Gain—Bandwidth Product IE= -0.2A ; VCE= 12V fT CONDITIONS MIN TYP. MAX 120 UNIT V 2000 100 MHz 0.5 μs 5.5 μs 1.5 μs Switching Times ton Turn-on Time tstg Storage Time tf Fall Time isc Website：www.iscsemi.cn IC= 3A ,RL= 10Ω, IB1= -IB2= 3mA,VCC= 30V