Inchange Semiconductor Product Specification 2SD1496 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·High voltage ,high reliability ·Wide area of safe operation APPLICATIONS ·High voltage power switching TV horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 600 V VEBO Emitter-base voltage Open collector 6 V Collector current 5 A Collector surge current 16 A 50 W IC IC(surge) TC=25℃ PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -45~150 ℃ Inchange Semiconductor Product Specification 2SD1496 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)EBO Emitter-base breakdown voltage IE=10mA; IC=0 V(BR)CEO Collector-emitter breakdown voltage IC=10mA; RBE=∞ VCEsat Collector-emitter saturation voltage IC=4.5A; IB=1.2A 5.0 V VBEsat Base-emitter saturation voltage IC=4.5A; IB=1.2A 1.5 V ICEX Collector cut-off current VCE=1500V; VBE=1.5V 1.0 mA IEBO Emitter cut-off current VEB=6V; IC=0 1.0 mA hFE DC current gain IC=0.3A ; VCE=5V Fall time IC=3A;IB1=0.7A, IB2=-2.7A; LB=0 tf 2 6 V 600 V 10 30 2.3 μs Inchange Semiconductor Product Specification 2SD1496 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3