isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 100V (Min.) ·High Switching Speed APPLICATIONS ·Designed for audio frequency power amplifier and low speed high current switching industrial use. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage n c . i m e VALUE UNIT 100 V 100 V 7 V s c s i . w w w IC Collector Current-Continunous 7 A ICM Collector Current-Peak 10 A IB Base Current-Continunous 0.5 A IBM Base Current-Peak 1.0 A PC Collector Power Dissipation @TC=25℃ 30 W Tj Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 4.17 ℃/W isc Website：www.iscsemi.cn 2SD1791 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1791 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 5mA 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 5mA 2.0 V ICBO Collector Cutoff Current VCB= 100V; IE= 0 0.1 mA ICEO Collector Cutoff Current VCE= 100V; IB= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 5 mA hFE DC Current Gain IC= 3A, VCE= 3V fT CONDITIONS Switching Times; Resistive Load w w ton Turn-On Time ts Storage Time tf Fall Time isc Website：www.iscsemi.cn TYP. B B n c . i m e s c s i . w Current-Gain—Bandwidth Product MIN IC= 0.7A; VCE= 10V IC= 3A; IB1= -IB2= 5mA VBB2= 4V; RL= 10Ω 1500 30000 20 MHz 2 μs 12 μs 5 μs