Inchange Semiconductor Product Specification Silicon NPN Darlington Power Transistors 2SD1895 DESCRIPTION ・With TO-3PFa package ・High DC current gain ・Low collector saturation voltage ・Complement to type 2SB1255 APPLICATIONS ・Power amplification ・Optimum for 90W high-fidelity output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO PARAMETER CONDITIONS VALUE UNIT Collector-base voltage Open emitter 160 V Collector-emitter voltage Open base 140 V Emitter-base voltage Open collector 5 V IC Collector current 15 A ICP Collector current-peak 8 A PC Collector power dissipation TC=25℃ 100 W 3 Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SD1895 Silicon NPN Darlington Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=30mA ; IB=0 VCEsat Collector-emitter saturation voltage IC=7A ;IB=7mA 2.5 V VBEsat Base-emitter saturation voltage IC=7A ;IB=7mA 3.0 V ICBO Collector cut-off current VCB=160V; IE=0 100 μA ICEO Collector cut-off current VCE=140V; IB=0 100 μA IEBO Emitter cut-off current VEB=5V; IC=0 100 μA hFE-1 DC current gain IC=1A ; VCE=5V hFE -2 fT CONDITIONS MIN TYP. MAX 140 V 2000 R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH DC current gain IC=7A ; VCE=5V Transition frequency IC=0.5A ; VCE=10V;f=1MHz UNIT 5000 30000 20 MHz 2.0 μs 6.0 μs 1.2 μs Switching times ton Turn-on time tstg tf IC=7A; VCC=50V IB1=-IB2=7mA Storage time Fall time hFE-2 classifications Q P 5000-15000 8000-30000 2 Inchange Semiconductor Product Specification Silicon NPN Darlington Power Transistors 2SD1895 PACKAGE OUTLINE R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3