isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BD733 DESCRIPTION ·DC Current Gain : hFE = 40(Min.)@ IC= 20mA ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 25V(Min.) ·Complement to Type BD734 APPLICATIONS ·Designed for amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL s c s i . w PARAMETER w w VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage n c . i m e VALUE UNIT 25 V 25 V 5 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 7 A IB Base Current-Continuous 1 A Collector Power Dissipation @ Ta=25℃ 2 B PC TJ Tstg W Collector Power Dissipation @ TC=25℃ 40 Junction Temperature 150 ℃ -55~150 ℃ Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BD733 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 25 V V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0 25 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A 0.6 V VBE(on) Base-Emitter On Voltage IC= 2A; VCE= 1V 1.1 V ICES Collector Cutoff Current mA hFE-1 DC Current Gain hFE-2 DC Current Gain m e s isc 0.2 B VCE= 25V; VBE= 0 w. w w isc Website：www.iscsemi.cn MIN IC= 20mA; VCE= 4V IC= 2A; VCE= 1V 2 n c . i 40 50 MAX UNIT