Inchange Semiconductor Product Specification 2SC2502 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・High breakdown voltage ・High speed switching time APPLICATIONS ・For use in high-voltage,high-speed ,power switching in inductive circuit. PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 6 A ICM Collector current-peak 12 A IB Base current 2 A PC Collector dissipation 50 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ MAX UNIT 2.5 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case Inchange Semiconductor Product Specification 2SC2502 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ; IB=0 VCEsat Collector-emitter saturation voltage IC=3A; IB=0.3A 0.7 V VBEsat Base-emitter saturation voltage IC=3A; IB=0.3A 1.5 V ICEO Collector cut-off current VCE=320V ;IB=0 100 μA ICBO Collector cut-off current VCB=500V ;IE=0 100 μA IEBO Emitter cut-off current VEB=7V; IC=0 1 mA hFE-1 DC current gain IC=3A ; VCE=2V 15 hFE-2 DC current gain IC=6A ; VCE=2V 8 Transition frequency IC=0.6A ; VCE=10V;f=1MHz 10 fT CONDITIONS MIN TYP. MAX 400 UNIT V MHz Switching times ton Turn-on time tstg Storage time tf IC=3A IB1=-IB2=0.6A; RL=10Ω,VCC=30V Fall time 2 1.0 μs 3.0 μs 0.7 μs Inchange Semiconductor Product Specification 2SC2502 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3