isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor BDX78F DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO = -80V(Min) ·Complement to Type BDX77F APPLICATIONS ·Designed for use in hi-fi equipment delivering an output of 15 to 15 W into a 4Ωor 8Ωload. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A ICM Collector Current-Peak s -12 A IB Base Current -3 A PC Collector Power Dissipation @ TC=25℃ 32 W TJ Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case isc Website：www.iscsemi.cn MAX UNIT 6.3 ℃/W isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor BDX78F ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= -0.2A ;IB= 0 -80 V V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA ;IE= 0 -100 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA ;IC= 0 -5 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A -1.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -6A; IB= -0.6A -1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= -6A; IB= -0.6A -2.0 V VBE(on) Base-Emitter On Voltage IC= -3A ; VCE= -2V -1.5 V ICEO Collector Cutoff Current VCE= 40V; IB= 0 -0.2 mA ICBO Collector Cutoff Current VCB= VCBO;IE= 0 1 VCB= /2VCBO;IE= 0; TJ= 150℃ -0.1 -1.0 mA IEBO Emitter Cutoff Current VEB= -5V; IC=0 -0.5 mA hFE DC Current Gain IC= -2A ; VCE= -2V 30 Current-Gain—Bandwidth Product IC= -0.3A ; VCE= -3V, ftest= 1.0MHz 7.0 fT CONDITIONS B MIN B B B B MAX UNIT MHz Switching Times ton Turn-On Time 1 μs 2 μs IC= -2A; IB1= -IB2= -0.2A toff Turn-Off Time isc Website：www.iscsemi.cn 2