Inchange Semiconductor Product Specification Silicon PNP Darlington Power Transistors TIP105/106/107 DESCRIPTION ・With TO-220C package ・DARLINGTON ・High DC current gain ・Low collector saturation voltage ・Complement to type TIP100/101/102 APPLICATIONS ・For industrial use PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Tc=25℃) SYMBOL PARAMETER CONDITIONS TIP105 VCBO VCEO Collector-base voltage Collector-emitter voltage TIP106 Open emitter Emitter-base voltage IC -80 TIP107 -100 TIP105 -60 TIP106 UNIT -60 Open base TIP107 VEBO VALUE -80 V V -100 Open collector -5 V Collector current-DC -8 A ICM Collector current-peak -15 A IB Base current-DC -1 A PC Collector power dissipation TC=25℃ 80 Ta=25℃ 2 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ Inchange Semiconductor Product Specification Silicon PNP Darlington Power Transistors TIP105/106/107 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS TIP105 VCEO(SUS) Collector-emitter sustaining voltage TIP106 MIN TYP. MAX UNIT -60 IC=-30mA, IB=0 V -80 -100 TIP107 VCEsat-1 Collector-emitter saturation voltage IC=-3A ,IB=-6mA -2.0 V VCEsat-2 Collector-emitter saturation voltage IC=-8A ,IB=-80mA -2.5 V Base-emitter on voltage IC=-8A ; VCE=-4V -2.8 V -50 μA -50 μA -2 mA VBE ICBO ICEO Collector cut-off current Collector cut-off current TIP105 VCB=-60V, IE=0 TIP106 VCB=-80V, IE=0 TIP107 VCB=-100V, IE=0 TIP105 VCE=-30V, IB=0 TIP106 VCE=-40V, IB=0 TIP107 VCE=-50V, IB=0 IEBO Emitter cut-off current VEB=-5V; IC=0 hFE-1 DC current gain IC=-3A ; VCE=-4V 1000 hFE-2 DC current gain IC=-8A ; VCE=-4V 200 Cob Output capacitance IE=0 ; VCB=-10V,f=0.1MHz 2 20000 300 pF Inchange Semiconductor Product Specification Silicon PNP Darlington Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 TIP105/106/107