Inchange Semiconductor Product Specification 2SC1880 Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·DARLINGTON ·High DC current gain APPLICATIONS ·For industrial use PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 120 V VCEO Collector-emitter voltage Open base 120 V VEBO Emitter-base voltage Open collector 5 V IC Collector current-DC 2 A ICM Collector current-Pulse 4 A PC Collector power dissipation 15 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC1880 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=30mA, IB=0 120 V V(BR)CBO Collector-base breakdown voltage IC=1mA, IE=0 120 V V(BR)EBO Emitter-base breakdown voltage IE=50mA, IC=0 5 V Collector-emitter saturation voltage IC=2A ,IB=8mA 1.2 V ICBO Collector cut-off current VCB=100V, IE=0 0.1 mA ICEO Collector cut-off current VCE=100V, IB=0 0.1 mA IEBO Emitter cut-off current VEB=5V; IC=0 50 mA hFE DC current gain IC=2A ; VCE=2V VCEsat CONDITIONS 2 MIN 1000 TYP. MAX UNIT Inchange Semiconductor Product Specification 2SC1880 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3