ISC 2SC1880

Inchange Semiconductor
Product Specification
2SC1880
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220C package
·DARLINGTON
·High DC current gain
APPLICATIONS
·For industrial use
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings(Tc=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
120
V
VCEO
Collector-emitter voltage
Open base
120
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current-DC
2
A
ICM
Collector current-Pulse
4
A
PC
Collector power dissipation
15
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SC1880
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=30mA, IB=0
120
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA, IE=0
120
V
V(BR)EBO
Emitter-base breakdown voltage
IE=50mA, IC=0
5
V
Collector-emitter saturation voltage
IC=2A ,IB=8mA
1.2
V
ICBO
Collector cut-off current
VCB=100V, IE=0
0.1
mA
ICEO
Collector cut-off current
VCE=100V, IB=0
0.1
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
50
mA
hFE
DC current gain
IC=2A ; VCE=2V
VCEsat
CONDITIONS
2
MIN
1000
TYP.
MAX
UNIT
Inchange Semiconductor
Product Specification
2SC1880
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3